Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Despite the tremendous progress on wide-bandgap materials in the last few decades, devices made of these materials are still far from their maximum theoretical performance, especially at high frequencies and voltage levels. New ultrawide-bandgap materials have the potential to improve this performance even further, but a better understanding of mobile carrier dynamics, charge transport, electron-hole recombination, and interaction with charged defects in dependence on specific operation conditions and mission profiles is needed, including supporting modelling and simulation. In addition, the new polytypes and reduced lattice symmetry in novel wide- and ultrawide-bandgap semiconductors enable new structure-property relationships and new design strategies to engineer the formation of two-dimensional carrier gases, as well as to tailor phonon-electron scattering band offsets through strain engineering in heteroepitaxy.
Guest editors: Huili Grace Xing, Joachim Würfl, Tomás Palacios, Yue Hao, and Mathias Schubert