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Ultrawide Bandgap Semiconductors

Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly, providing new and exciting research opportunities for a wide range of electronic, optical, sensing and quantum applications. Materials with bandgaps exceeding that of gallium nitride (3.4 eV) and silicon carbide (3.3 eV), such as gallium oxide (aluminum gallium oxide), diamond, cubic-boron nitride and aluminum gallium nitride are at the frontier of semiconductor materials research and device physics.

Guest Editors: Masataka Higashiwaki, Robert Kaplar, Julien Pernot, and Hongping Zhao

EDITORIALS

Ultrawide bandgap semiconductors

Masataka Higashiwaki; Robert Kaplar; Julien Pernot; Hongping Zhao

10.1063/5.0055292

SEMICONDUCTORS

Optimizing Ohmic contacts to Nd-doped n-type SrSnO₃

V. R. Saran Kumar Chaganti; Prafful Golani; Tristan K. Truttmann; Fengdeng Liu; Bharat Jalan; Steven J. Koester

10.1063/5.0027470

SEMICONDUCTORS

Ultra-wide bandgap corundum-structured p-type α -(Ir,Ga)₂O₃ alloys for α -Ga₂O₃ electronics

Kentaro Kaneko; Yasuhisa Masuda; Shin-ichi Kan; Isao Takahashi; Yuji Kato; Takashi Shinohe; Shizuo Fujita

10.1063/5.0027297

SEMICONDUCTORS

Impurity band conduction in Si-doped β -Ga₂O₃ films

Anil Kumar Rajapitamahuni; Laxman Raju Thoutam; Praneeth Ranga; Sriram Krishnamoorthy; Bharat Jalan

10.1063/5.0031481

SEMICONDUCTORS

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Tsung-Han Yang; Jesse Brown; Kai Fu; Jingan Zhou; Kevin Hatch; Chen Yang; Jossue Montes; Xin Qi; Houqiang Fu; Robert J. Nemanich; Yuji Zhao

10.1063/5.0027885

ADVANCED MATERIALS

Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

L. Mehmel; R. Issaoui; O. Brinza; A. Tallaire; V. Mille; J. Delchevalrie; S. Saada; J. C. Arnault; F. Bénédic; J. Achard

10.1063/5.0033741

SEMICONDUCTORS

Anisotropic dielectric functions, band-to-band transitions, and critical points in α -Ga₂O₃

Matthew Hilfiker; Rafał Korlacki; Riena Jinno; Yongjin Cho; Huili Grace Xing; Debdeep Jena; Ufuk Kilic; Megan Stokey; Mathias Schubert

10.1063/5.0031424

SEMICONDUCTORS

Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of β -Ga₂O₃ single crystals

Ashish Kumar; Saurabh Singh; Bhera Ram Tak; Ashutosh Patel; K. Asokan; D. Kanjilal

10.1063/5.0043903

DEVICE PHYSICS

Hot-electron photocurrent detection of near-infrared light based on ZnO

Y. Hou; H. Liang; A. Tang; X. Du; Z. Mei

10.1063/5.0031719

SEMICONDUCTORS

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

D. Araujo; F. Lloret; G. Alba; M. P. Alegre; M. P. Villar

10.1063/5.0031476

DEVICE PHYSICS

Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al₂O₃ dielectric layer

Minghui Zhang; Wei Wang; Genqiang Chen; Haris Naeem Abbasi; Fang Lin; Feng Wen; Kaiyue Wang; Jingwen Zhang; Renan Bu; Hongxing Wang

10.1063/5.0027882

SEMICONDUCTORS

Anisotropic complex refractive index of β-Ga₂O₃ bulk and epilayer evaluated by terahertz time-domain spectroscopy

Verdad C. Agulto; Kazuhiro Toya; Thanh Nhat Khoa Phan; Valynn Katrine Mag-usara; Jiajun Li; Melvin John F. Empizo; Toshiyuki Iwamoto; Ken Goto; Hisashi Murakami; Yoshinao Kumagai; Nobuhiko Sarukura; Masashi Yoshimura; Makoto Nakajima

10.1063/5.0031531

QUANTUM TECHNOLOGIES

Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor

Yuji Hatano; Jaewon Shin; Daisuke Nishitani; Haruki Iwatsuka; Yuta Masuyama; Hiroki Sugiyama; Makoto Ishii; Shinobu Onoda; Takeshi Ohshima; Keigo Arai; Takayuki Iwasaki; Mutsuko Hatano

10.1063/5.0031502

SEMICONDUCTORS