Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface

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Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the $p - Ga N$ surface and the undoped-GaN surface

Appl. Phys. Lett. 89, 041116 (2006)

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Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the $p - Ga N$ surface and the undoped-GaN surface

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Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the $p - Ga N$ surface and the undoped-GaN surface