Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structure

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Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel ${Al}_{2} O_{3} ∕ Hf O_{2} ∕ {Al}_{2} O_{3}$ structure

Appl. Phys. Lett. 92, 192104 (2008)

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Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel ${Al}_{2} O_{3} ∕ Hf O_{2} ∕ {Al}_{2} O_{3}$ structure

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Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel ${Al}_{2} O_{3} ∕ Hf O_{2} ∕ {Al}_{2} O_{3}$ structure