Skip to Main Content
Umbrella Alt Text
header search
Search
Advanced Search |Citation Search
Skip Nav Destination

Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

Appl. Phys. Lett. 113, 143503 (2018)
This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.
Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO2/RuO2 Memristor
  • Dong Hoon Shin
  • Hyungjun Park
  • Néstor Ghenzi
  • Yeong Rok Kim
  • Sunwoo Cheong
  • Sung Keun Shim
  • Seongpil Yim
  • Tae Won Park
  • Haewon Song
  • Jung Kyu Lee
  • Byeong Su Kim
  • Taegyun Park
  • Cheol Seong Hwang
ACS Applied Materials & Interfaces 16, 16462 (2024)
Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance
  • Mari Napari
  • Spyros Stathopoulos
  • Themis Prodromakis
  • Firman Simanjuntak
Electronic Materials Letters 20, 363 (2024)
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
  • Giuseppe Leonetti
  • Matteo Fretto
  • Fabrizio Candido Pirri
  • Natascia De Leo
  • Ilia Valov
  • Gianluca Milano
Scientific Reports (2023) 13 (1)
Spinel ferrites for resistive random access memory applications
  • Ketankumar Gayakvad
  • Kaushik Somdatta
  • Vikas Mathe
  • Tukaram Dongale
  • Madhuri W
  • Ketaki Patankar
Emergent Materials (2023)
High-temperature operation of gallium oxide memristors up to 600 K
  • Kento Sato
  • Yusuke Hayashi
  • Naoki Masaoka
  • Tetsuya Tohei
  • Akira Sakai
Scientific Reports (2023) 13 (1)
Charge Transport inside TiO2 Memristors Prepared via FEBID
  • Markus Baranowski
  • Roland Sachser
  • Bratislav P. Marinković
  • Stefan Dj. Ivanović
  • Michael Huth
Nanomaterials 12, 4145 (2022)
A Novel Approach to Analyze the Resistance of the RRAM Based on the Conductive Nano Filament Length and Width Variation
  • H. M. Vijay
  • V. N. Ramakrishnan
Transactions on Electrical and Electronic Materials 23, 476 (2022)
Research progress of neuromorphic devices based on two-dimensional layered materials
  • Ce Li
  • Dong-Liang Yang
  • Lin-Feng Sun
Acta Physica Sinica 71, 218504 (2022)
Polarity reversal of resistance response to trace H2 gas in the air between asymmetrically shaped electrodes on rutile-TiO2 single crystal
  • T. T. Suzuki
  • T. Ohgaki
  • Y. Adachi
  • I. Sakaguchi
Journal of Applied Physics (2022) 131 (3)
Selectively biased tri-terminal vertically-integrated memristor configuration
  • Vasileios Manouras
  • Spyros Stathopoulos
  • Alex Serb
  • Themis Prodromakis
Scientific Reports (2022) 12 (1)
Inkjet‐Printed Ag/a‐TiO2/Ag Neuromorphic Nanodevice Based on Functionalized Ink
  • Barbara Salonikidou
  • Adnan Mehonic
  • Yasunori Takeda
  • Shizuo Tokito
  • Jonathan England
  • Radu A. Sporea
Advanced Engineering Materials (2022) 24 (11)
Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM
  • Zhenzhong Zhang
  • Fang Wang
  • Kai Hu
  • Yu She
  • Sannian Song
  • Zhitang Song
  • Kailiang Zhang
Materials 14, 3330 (2021)
Frequency Response of Metal-Oxide Memristors
  • Vasileios Manouras
  • Spyros Stathopoulos
  • Suresh Kumar Garlapati
  • Alex Serb
  • Themis Prodromakis
IEEE Transactions on Electron Devices 68, 3636 (2021)
Interface Engineering for 3-Bit per Cell Multilevel Resistive Switching in AlN Based Memristor
  • Srikant Kumar Mohanty
  • Poshan Kumar Reddy
  • Om Kumar Prasad
  • Chien-Hung Wu
  • Kow-Ming Chang
  • Jia-Chuan Lin
IEEE Electron Device Letters 42, 1770 (2021)
Induced Complementary Resistive Switching in Forming-Free TiOx/TiO2/TiOx Memristors
  • Saurabh Srivastava
  • Joseph Palathinkal Thomas
  • Xiaoyi Guan
  • Kam Tong Leung
ACS Applied Materials & Interfaces 13, 43022 (2021)
Influence of the active TaN/ZrO x /Ni memristor layer oxygen content on forming and resistive switching behavior
  • V A Voronkovskii
  • V S Aliev
  • A K Gerasimova
  • T V Perevalov
  • I P Prosvirin
  • D R Islamov
Nanotechnology 32, 185205 (2021)
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing
  • Chunyang Liu
  • Pengpeng Ren
  • Bo Zhou
  • Jianfu Zhang
  • Hui Fang
  • Zhigang Ji
IEEE Access (2021) 9: 168648.
Laser synthesis of non-volatile memristor structures based on tantalum oxide thin films
  • Liubov Parshina
  • Oleg Novodvorsky
  • Olga Khramova
  • Dmitriy Gusev
  • Alexander Polyakov
  • Vladimir Mikhalevsky
  • Elena Cherebilo
Chaos, Solitons & Fractals (2021) 142: 110460.
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ Memristors—Part II: Physics-Based Model
  • Dhirendra Vaidya
  • Shraddha Kothari
  • Thomas Abbey
  • Spyros Stathopoulos
  • Loukas Michalas
  • Alexantrou Serb
  • Themis Prodromakis
IEEE Transactions on Electron Devices 68, 4885 (2021)
Technology agnostic frequency characterization methodology for memristors
  • Vasileios Manouras
  • Spyros Stathopoulos
  • Alex Serb
  • Themis Prodromakis
Scientific Reports (2021) 11 (1)
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors—Part I: Behavioral Model
  • Dhirendra Vaidya
  • Shraddha Kothari
  • Thomas Abbey
  • Ali Khiat
  • Spyros Stathopoulos
  • Loukas Michalas
  • Alexantrou Serb
  • Themis Prodromakis
IEEE Transactions on Electron Devices 68, 4877 (2021)
Nanorods Versus Nanoparticles: A Comparison Study of Au/ZnO-PMMA/Au Non-Volatile Memory Devices Showing the Importance of Nanostructure Geometry on Conduction Mechanisms and Switching Properties
  • Ayoub H. Jaafar
  • Alex Gee
  • Neil Timothy Kemp
IEEE Transactions on Nanotechnology (2020) 19: 236.
Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
  • K.E. González-Flores
  • P. Horley
  • S.A. Cabañas-Tay
  • S.A. Pérez-García
  • L. Licea-Jiménez
  • L. Palacios-Huerta
  • M. Aceves-Mijares
  • M. Moreno-Moreno
  • A. Morales-Sánchez
Superlattices and Microstructures (2020) 137: 106347.
Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory
  • Hyojong Cho
  • Sungjun Kim
Nanomaterials 10, 1821 (2020)
Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor
  • Kai-Jhih Gan
  • Wei-Chiao Chang
  • Po-Tsun Liu
  • Simon M. Sze
Applied Physics Letters (2019) 115 (14)
Electromigration-induced leakage current enhancement and its anisotropy in single crystal TiO2
  • Daniel Long
  • Nicole Creange
  • Ali Moballegh
  • Elizabeth C. Dickey
Journal of Applied Physics (2019) 125 (18)
An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies
  • Spyros Stathopoulos
  • Loukas Michalas
  • Ali Khiat
  • Alexantrou Serb
  • Themis Prodromakis
Scientific Reports (2019) 9 (1)
An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks
  • L. Michalas
  • S. Stathopoulos
  • A. Khiat
  • T. Prodromakis
Scientific Reports (2019) 9 (1)
Conduction mechanisms of TaN/HfO x /Ni memristors
  • V A Voronkovskii
  • V S Aliev
  • A K Gerasimova
  • D R Islamov
Materials Research Express 6, 076411 (2019)
Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices
  • Saurabh Srivastava
  • Joseph Palathinkal Thomas
  • Kam Tong Leung
Nanoscale 11, 18159 (2019)
Synergistic Effect of Singly Charged Oxygen Vacancies and Ligand Field for Regulating Transport Properties of Resistive Switching Memories
  • D. Das
  • A. Barman
  • S. Kumar
  • A. K. Sinha
  • M. Gupta
  • R. Singhal
  • P. Johari
  • A. Kanjilal
The Journal of Physical Chemistry C 123, 26812 (2019)
Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors
  • Xiaojuan Lian
  • Xinyi Shen
  • Liqun Lu
  • Nan He
  • Xiang Wan
  • Subhranu Samanta
  • Yi Tong
Micromachines 10, 369 (2019)
  • Online ISSN 1077-3118
  • Print ISSN 0003-6951

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

  • © Copyright AIP Publishing LLC
Close Modal
This Feature Is Available To Subscribers Only

or Create an Account

Close Modal
Close Modal