InAs/GaSb(001) valence‐band offset: Independence of interface composition and strain | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

InAs/GaSb(001) valence‐band offset: Independence of interface composition and strain

Appl. Phys. Lett. 69, 3218–3220 (1996)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy

Raymond T. Tung
Leeor Kronik

Physical Review B (2016) 94 (7)

Electronic structure of InAs/GaSb core-shell nanowires

V. V. Ravi Kishore
B. Partoens
F. M. Peeters

Physical Review B (2012) 86 (16)

Determination of interface structure and atomic arrangements for strained InAs/Ga1−xInxSb superlattices by high-resolution transmission electron microscopy

Maohua Quan
Fengyun Guo
Meicheng Li
Liancheng Zhao

Journal of Applied Physics (2010) 108 (6)

Accurate quadratic-response approximation for the self-consistent pseudopotential of semiconductor nanostructures

Bradley A. Foreman

Physical Review B (2007) 76 (4)

First-principles envelope-function theory for lattice-matched semiconductor heterostructures

Bradley A. Foreman

Physical Review B (2005) 72 (16)

Quadratic response theory for spin-orbit coupling in semiconductor heterostructures

Bradley A. Foreman

Physical Review B (2005) 72 (16)

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman
J. R. Meyer
L. R. Ram-Mohan

Journal of Applied Physics 89, 5815 (2001)

Band offsets and stability of BeTe/ZnSe (100) heterojunctions

Fabio Bernardini
Maria Peressi
Vincenzo Fiorentini

Physical Review B 62, R16302 (2000)

Band engineering at interfaces: theory and numerical experiments

M Peressi
N Binggeli
A Baldereschi

Journal of Physics D: Applied Physics 31, 1273 (1998)

The band lineups at highly strained ZnS/CdS and ZnSe/ZnTe interfaces: effects of the quadratic deformation potentials and the relaxation of the semicore d-electrons

R Said
A Qteish
N Meskini

Journal of Physics: Condensed Matter 10, 8703 (1998)