Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

Appl. Phys. Lett. 108, 182102 (2016)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology

Alexander E. Yachmenev
Sergey S. Pushkarev
Rodion R. Reznik
Rustam A. Khabibullin
Dmitry S. Ponomarev

Progress in Crystal Growth and Characterization of Materials 66, 100485 (2020)

Mechanism for embedded in-plane self-assembled nanowire formation

Nathaniel S. Wilson
Stephan Kraemer
Daniel J. Pennachio
Patrick Callahan
Mihir Pendharkar
Christopher J. Palmstrøm

Physical Review Materials (2020) 4 (6)

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Bivas Saha
Ali Shakouri
Timothy D. Sands

Applied Physics Reviews (2018) 5 (2)

Surfactant-induced chemical ordering of GaAsN:Bi

J. Occena
T. Jen
H. Lu
B. A. Carter
T. S. Jimson
A. G. Norman
R. S. Goldman

Applied Physics Letters (2018) 113 (21)

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R. Salas
S. Guchhait
S. D. Sifferman
K. M. McNicholas
V. D. Dasika
D. Jung
E. M. Krivoy
M. L. Lee
S. R. Bank

APL Materials 5, 096106 (2017)

Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Cory C. Bomberger
Matthew R. Lewis
Laura R. Vanderhoef
Matthew F. Doty
Joshua M. O. Zide

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (2017) 35 (3)