Effect of magnetic field on current filament in gold‐doped silicon | Citedby Results | Applied Physics Letters | AIP Publishing

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Effect of magnetic field on current filament in gold‐doped silicon

Appl. Phys. Lett. 21, 154–156 (1972)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Experimental observation of spatial structures due to current filament formation in silicon pin diodes

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H. Baumann
R. Symanczyk

Physics Letters A 117, 141 (1986)

Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes

Bhaskar Mantha
H.Thurman Henderson

Solid-State Electronics 23, 275 (1980)

An investigation of the effect of a magnetic field on the forward characteristics of some silicon diodes at low temperatures

R V Aldridge
K Davis
M Holloway

Journal of Physics D: Applied Physics 8, 64 (1975)

On the behaviour of forward biased silicon diodes at low temperatures

Richard V. Aldridge

Solid-State Electronics 17, 617 (1974)