Uniform p‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

Uniform p‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C

Appl. Phys. Lett. 59, 1943–1945 (1991)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Monte Carlo simulations applied toAlxGayIn1−x−yXquaternary alloys(X=As,P,N): A comparative study

M. Marques
L. G. Ferreira
L. K. Teles
L. M. R. Scolfaro

Physical Review B (2005) 71 (20)

Hydrogen effect on 670-nm AlGaInP visible laser during high temperature operation

IEEE Journal of Selected Topics in Quantum Electronics 1, 717 (1995)

Diode laser-induced fluorescence detection in chromatography

A.J.G. Mank
H. Lingeman
C. Gooijer

TrAC Trends in Analytical Chemistry 11, 210 (1992)