Si/SiGe quantum wells grown on vicinal Si(001) substrates: Morphology, dislocation dynamics, and transport properties

Skip Nav Destination

$Si/SiGe$ quantum wells grown on vicinal $Si (001)$ substrates: Morphology, dislocation dynamics, and transport properties

Appl. Phys. Lett. 72, 2262–2264 (1998)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Terahertz Probing of Anisotropic Conductivity and Morphology of CuMnAs Epitaxial Thin Films

Peter Kubaščík
Andrej Farkaš
Kamil Olejník
Tinkara Troha
Matěj Hývl
Filip Krizek
Deep Chandra Joshi
Tomáš Ostatnický
Jiří Jechumtál
Miloš Surýnek
Eva Schmoranzerová
Richard P. Campion
Jakub Zázvorka
Vít Novák
Petr Kužel
Tomáš Jungwirth
Petr Němec
Lukáš Nádvorník

Advanced Physics Research (2024) 3 (1)

Pentamers with interstitial atoms as the building blocks of the Ge(3 3 1)-5 × 1 surface

R.A. Zhachuk
J. Coutinho

Applied Surface Science (2020) 533: 147507.

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

M. L. Orlov
N. S. Volkova
N. L. Ivina
L. K. Orlov

Semiconductors 52, 1129 (2018)

Relating plasma processing, surface morphology, and electronic properties of nanomaterials

Valeri Ligatchev

Journal of Physics D: Applied Physics 44, 174013 (2011)

Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering

T K S Wong
Y Gong
P Yang
C M Ng

Semiconductor Science and Technology 22, 1232 (2007)

Influence of surface roughness and internal strain on defect spectrum and intensity of low-temperature photoluminescence of thin Si1−xGex layers

V. Ligatchev
T. K. S. Wong
S. F. Yoon

Journal of Applied Physics 95, 7681 (2004)

Electrical characteristics and the energy band diagram of the isotype n-Si1−x Gex/n-Si heterojunction in relaxed structures

L. K. Orlov
Zs. J. Horváth
A. V. Potapov
M. L. Orlov
S. V. Ivin
V. I. Vdovin
E. A. Steinman
V. M. Fomin

Physics of the Solid State 46, 2139 (2004)

Hole transport in SiGe channels on step-bunched vicinal Si surfaces

R. Neumann
K. Brunner
G. Abstreiter

Physica E: Low-dimensional Systems and Nanostructures 13, 986 (2002)

On the microscopic origin of the kinetic step bunching instability on vicinal Si()

J Mysliveček
C Schelling
F Schäffler
G Springholz
P Šmilauer
J Krug
B Voigtländer

Surface Science 520, 193 (2002)

Effect of surface segregation on the sharpness of heteroboundaries in multilayered Si(Ge)/Si1−x Gex structures grown from atomic beams in vacuum

N. L. Ivina
L. K. Orlov

Physics of the Solid State 43, 1182 (2001)

Misfit dislocation interactions in low mismatch p/p+Si

P Feichtinger
B Poust
M S Goorsky
D Oster
J Chambers
J Moreland

Journal of Physics D: Applied Physics 34, A128 (2001)

Quantum wires in strained silicon quantum wells on tilted substrates

M.J. Rack
T.J. Thornton
D.K. Ferry

Superlattices and Microstructures 28, 369 (2000)

Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology

J M Hartmann
B Gallas
J Zhang
J J Harris

Semiconductor Science and Technology 15, 370 (2000)

Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

E. T. Croke
F. Grosse
J. J. Vajo
M. F. Gyure
M. Floyd
David J. Smith

Applied Physics Letters 77, 1310 (2000)

A monohydride high-index silicon surface: Si(114):H-(2×1)

A. Laracuente
S. C. Erwin
L. J. Whitman

Applied Physics Letters 74, 1397 (1999)

Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch

J. M. Hartmann
B. Gallas
J. Zhang
J. J. Harris
B. A. Joyce

Journal of Applied Physics 86, 845 (1999)

Minigaps in strained silicon quantum wells on tilted substrates

T. J. Thornton
F. Ge
A. Andresen
D. Pivin
J. Bird
D. K. Ferry

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17, 1757 (1999)

Structure of Ge(113): Origin and Stability of Surface Self-Interstitials

A. Laracuente
S. C. Erwin
L. J. Whitman

Physical Review Letters 81, 5177 (1998)

$Si/SiGe$ quantum wells grown on vicinal $Si (001)$ substrates: Morphology, dislocation dynamics, and transport properties

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only

$Si/SiGe$ quantum wells grown on vicinal $Si (001)$ substrates: Morphology, dislocation dynamics, and transport properties