GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

Skip Nav Destination

Appl. Phys. Lett. 77, 1858–1860 (2000)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry

Qiubo Li
Lei Liu
Jiaoxian Yu
Shouzhi Wang
Guodong Wang
Zhongxin Wang
Zhanguo Qi
Xuanyi Zhao
Guangxia Liu
Xiangang Xu
Lei Zhang

Applied Surface Science (2024) 653: 159396.

Wireless photoelectrochemical mechanical polishing for inert compound semiconductor wafers

Liqing Qiao
Liwei Ou
Kang Shi

Journal of Manufacturing Processes (2023) 88: 97.

Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Tao Feng
Shuo Zhang
Kailai Yang
Qi Chen
Meng Liang
Jianchang Yan
Xiaoyan Yi
Junxi Wang
Jinmin Li
Zhiqiang Liu

Advanced Optical Materials (2022) 10 (24)

Polishing tool with phyllotactic distributed through-holes for photochemically combined mechanical polishing of N-type gallium nitride wafers

Liwei Ou
Sai Guo
Yan Zhe
Zhigang Dong
Renke Kang
Dongming Guo
Kang Shi

Precision Engineering (2020) 66: 135.

Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays

Mahitosh Biswas
Ravinder Kumar
Arka Chatterjee
Yuanpeng Wu
Zetain Mi
Pallab Bhattacharya
Samir Kumar Pal
Subhananda Chakrabarti

Journal of Luminescence (2020) 222: 117123.

Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

Yanfang Lou
Chulho Song
Yanna Chen
Loku Singgappulige Rosantha Kumara
Natalia Palina
Okkyun Seo
Satoshi Hiroi
Kentaro Kajiwara
Masato Hoshino
Kentaro Uesugi
Yoshihiro Irokawa
Toshihide Nabatame
Yasuo Koide
Osami Sakata

CrystEngComm 20, 2861 (2018)

Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

Gaoqiang Deng
Yuantao Zhang
Ye Yu
Long Yan
Pengchong Li
Xu Han
Liang Chen
Degang Zhao
Guotong Du

Superlattices and Microstructures (2018) 116: 1.

Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity

Andrea Winnerl
Rui N. Pereira
Martin Stutzmann

Journal of Applied Physics (2017) 121 (20)

Influence of Slurry Flow Rate on Material Removal Rate and Topography of Chemical Mechanically Planarizedc-Plane (0001) GaN Surface

P. Parthiban
D. Das

ECS Journal of Solid State Science and Technology 6, P113 (2017)

Displacement current of Au/p-diamond Schottky contacts

Toshichika Aoki
Tokuyuki Teraji
Yasuo Koide
Kenji Shiojima

Materials Science in Semiconductor Processing (2017) 70: 207.

Step‐flow growth of GaN(0001) on 4H‐SiC(0001) by plasma‐assisted molecular beam epitaxy

Tobias Tingberg
Anders Larsson
Tommy Ive

physica status solidi (a) 213, 2498 (2016)

Size dictated thermal conductivity of GaN

Thomas E. Beechem
Anthony E. McDonald
Elliot J. Fuller
A. Alec Talin
Christina M. Rost
Jon-Paul Maria
John T. Gaskins
Patrick E. Hopkins
Andrew A. Allerman

Journal of Applied Physics (2016) 120 (9)

Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

Youngji Cho
Jiho Chang
Joonseok Ha
Hyun-jae Lee
Katsushi Fujii
Takafumi Yao
Woong Lee
Takashi Sekiguchi
Jun-Mo Yang
Jungho Yoo

Journal of the Korean Physical Society 66, 214 (2015)

Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing

Hua Gong
Guoshun Pan
Yan Zhou
Xiaolei Shi
Chunli Zou
Suman Zhang

Applied Surface Science (2015) 338: 85.

Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD

M. K. Öztürk
S. Çörekçi
M. Tamer
S. Ş. Çetin
S. Özçelik
E. Özbay

Applied Physics A 114, 1215 (2014)

Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate

Yi-Keng Fu
Yu-Hsuan Lu
Rong Xuan
Chia-Hsin Chao
Yan-Kuin Su
Jenn-Fang Chen

IEEE Photonics Technology Letters 24, 488 (2012)

Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates

IEEE Photonics Technology Letters 23, 798 (2011)

Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy

Anna Cavallini
Laura Polenta
Antonio Castaldini

Microelectronics Reliability 50, 1398 (2010)

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

M. K. Öztürk
Yu Hongbo
B. Sarıkavak
S. Korçak
S. Özçelik
E. Özbay

Journal of Materials Science: Materials in Electronics 21, 185 (2010)

Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Kuei-Ming Chen
Hsin-Hsiung Huang
Yi-Lin Kuo
Pei-Lun Wu
Ting-Li Chu
Hung-Wei Yu
Wei-I Lee

Journal of Crystal Growth 311, 3037 (2009)

Defect characterization in GaN: Possible influence of dislocations in the yellow-band features

L. Polenta
A. Castaldini
A. Cavallini

Journal of Applied Physics (2007) 102 (6)

DC characterization of laser‐debonded GaN HEMTs

C. P. Chan
K. K. Leung
M. Pilkuhn
C. Surya
T. M. Yue
G. Pang
H. Schweizer

physica status solidi (a) 204, 914 (2007)

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

Sung-Nam Lee
H.S. Paek
J.K. Son
T. Sakong
E. Yoon
O.H. Nam
Y. Park

Physica B: Condensed Matter (2006) 376-377: 532.

DLTS study of n-type GaN grown by MOCVD on GaN substrates

Y. Tokuda
Y. Matsuoka
H. Ueda
O. Ishiguro
N. Soejima
T. Kachi

Superlattices and Microstructures 40, 268 (2006)

Scanning x-ray excited optical luminescence microscopy in GaN

G. Martínez-Criado
B. Alen
A. Homs
A. Somogyi
C. Miskys
J. Susini
J. Pereira-Lachataignerais
J. Martínez-Pastor

Applied Physics Letters (2006) 89 (22)

Hot‐wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

A. Kakanakova‐Georgieva
I. G. Ivanov
C. Hallin
E. Janzén

physica status solidi (a) 202, 739 (2005)

Near-field optical characterization of GaN and InxGa1−xN/GaN heterostructures grown on freestanding GaN substrates

S.J. Chua
S. Tripathy
P. Chen
E. Takasuka
M. Ueno

Physica E: Low-dimensional Systems and Nanostructures 25, 356 (2005)

MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

J.D. Ye
S.L. Gu
F. Qin
S.M. Zhu
S.M. Liu
X. Zhou
W. Liu
L.Q. Hu
R. Zhang
Y. Shi
Y.D. Zheng
Y.D. Ye

Applied Physics A 81, 809 (2005)

Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates

V. Darakchieva
T. Paskova
P. P. Paskov
B. Monemar
N. Ashkenov
M. Schubert

Journal of Applied Physics (2005) 97 (1)

Growth and characterization of GaN PiN rectifiers on free-standing GaN

X. A. Cao
H. Lu
S. F. LeBoeuf
C. Cowen
S. D. Arthur
W. Wang

Applied Physics Letters (2005) 87 (5)

Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

Jian Dong Ye
Shu Lin Gu
Su Min Zhu
S.M. Liu
Feng Qin
W. Liu
X. Zhou
R. Zhang
Y. Shi
Y.D. Zheng

Materials Science Forum (2005) 475-479: 1693.

Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer

James R. Grandusky
Vibhu Jindal
Muhammad Jamil
Fatemeh Shahedipour-Sandvik

MRS Online Proceedings Library (2005) 892 (1)

Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films

C.P. Chan
B.H. Leung
W.K. Fong
P.K. Lai
Y.H. Loke
C. Surya
T.M. Yue
H.C. Man
X. Xiu
R. Zhang

Applied Surface Science 252, 1049 (2005)

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

X.A. Cao
C.H. Yan
M.P. D’Evelyn
S.F. LeBoeuf
J.W. Kretchmer
R. Klinger
S.D. Arthur
D.W. Merfeld

Journal of Crystal Growth 269, 242 (2004)

Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes

X. A. Cao
J. M. Teetsov
S. F. LeBoeuf
S. D. Arthur
J. Kretchmer

MRS Proceedings (2004) 831

Improvement of the quality of ZnO substrates by annealing

Hang-Ju Ko
Myung-Soo Han
Young-Sik Park
Yun-Sik Yu
Byong-In Kim
Sang Sub Kim
Jin-Hyeok Kim

Journal of Crystal Growth 269, 493 (2004)

Magnetic properties of Co/Ag/Co films grown on Ag(100) nanometer‐scale islands

D. H. Wei
C. C. Yu
S. C. Chou
Y. D. Yao
Y. Liou
T. S. Chin

physica status solidi (b) 241, 1752 (2004)

Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates

X. A. Cao
J. M. Teetsov
M. P. D’Evelyn
D. W. Merfeld
C. H. Yan

Applied Physics Letters 85, 7 (2004)

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

D. W. Merfeld
X. A. Cao
S. F. Leboeuf
S. D. Arthur
J. W. Kretchmer
M. P. D’Evelyn

Journal of Electronic Materials 33, 1401 (2004)

CHARACTERIZATIONS OF LOW-FREQUENCY NOISE IN LASER-DEBONDED HVPE-GROWN GaN THIN FILMS

C. P. CHAN
B. H. LEUNG
Y. H. LOKE
H. C. MAN
T. M. YUE
X. XIU
R. ZHANG
C. SURYA

Fluctuation and Noise Letters 04, L437 (2004)

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

T. Paskova
V. Darakchieva
E. Valcheva
P. P. Paskov
I. G. Ivanov
B. Monemar
T. Böttcher
C. Roder
D. Hommel

Journal of Electronic Materials 33, 389 (2004)

Thickness-related features observed in GaN epitaxial layers

A. Castaldini
A. Cavallini
L. Polenta

Applied Physics Letters 84, 4851 (2004)

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

G. Martinez-Criado
M. Kuball
M. Benyoucef
A. Sarua
E. Frayssinet
B. Beaumont
P. Gibart
C.R. Miskys
M. Stutzmann

Journal of Crystal Growth 255, 277 (2003)

Freestanding GaN‐substrates and devices

Claudio R. Miskys
Michael K. Kelly
Oliver Ambacher
Martin Stutzmann

physica status solidi (c) (2003) (6): 1627.

Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition

Jiandong Ye
Shulin Gu
Shunmin Zhu
Tong Chen
Wei Liu
Feng Qin
Liqun Hu
Rong Zhang
Yi Shi
Youdou Zheng

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21, 979 (2003)

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

U. T. Schwarz
P. J. Schuck
M. D. Mason
R. D. Grober
A. M. Roskowski
S. Einfeldt
R. F. Davis

Physical Review B (2003) 67 (4)

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

C.F. Zhu
J.Q. Xie
W.K. Fong
C. Surya

Materials Letters 57, 2413 (2003)

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

P.R Hageman
V Kirilyuk
W.H.M Corbeek
J.L Weyher
B Lucznik
M Bockowski
S Porowski
S Müller

Journal of Crystal Growth 255, 241 (2003)

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

X. L. Sun
S. H. Goss
L. J. Brillson
D. C. Look
R. J. Molnar

Journal of Applied Physics 91, 6729 (2002)

Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

M. A. Reshchikov
F. Yun
D. Huang
L. He
H. Morkoç
S. S. Park
K. Y. Lee

MRS Proceedings (2002) 722

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only