Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

Skip Nav Destination

Appl. Phys. Lett. 80, 1279–1281 (2002)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Unique Enhancement of the Whispering Gallery Mode in Hexagonal Microdisk Resonator Array with Embedded Ge Quantum Dots on Si

Zhifang Zhang
Jia Yan
Zuoru Dong
Ningning Zhang
Peizong Chen
Kun Peng
Yanyan Zhu
Zhenyang Zhong
Zuimin Jiang

Nanomaterials 13, 2553 (2023)

Near-infrared photoresponse in Ge/Si quantum dots enhanced by localized surface plasmons supported by aluminum nanodisks

A. I. Yakimov
V. V. Kirienko
A. A. Bloshkin
A. V. Dvurechenskii
D. E. Utkin

Journal of Applied Physics (2020) 128 (14)

Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

A. F. Zinovieva
V. A. Zinovyev
A. V. Nenashev
L. V. Kulik
A. V. Dvurechenskii

Physical Review B (2019) 99 (11)

Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting

M Aouassa
M A Zrir
I Jadli
L S Hassayoun
R Mghaieth
H Maaref
L Favre
A Ronda
I Berbezier

Bulletin of Materials Science (2019) 42 (2)

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

Muhammad Taha Sultan
Adrian Valentin Maraloiu
Ionel Stavarache
Jón Tómas Gudmundsson
Andrei Manolescu
Valentin Serban Teodorescu
Magdalena Lidia Ciurea
Halldór Gudfinnur Svavarsson

Beilstein Journal of Nanotechnology (2019) 10: 1873.

Ion Synthesis: Si–Ge Quantum Dots

N. N. Gerasimenko
N. S. Balakleyskiy
A. D. Volokhovskiy
D. I. Smirnov
O. A. Zaporozhan

Semiconductors 52, 625 (2018)

Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure

N. Ben Sedrine
R. Ribeiro-Andrade
A. Gustafsson
M. R. Soares
J. Bourgard
J. P. Teixeira
P. M. P. Salomé
M. R. Correia
M. V. B. Moreira
A. G. De Oliveira
J. C. González
J. P. Leitão

Nanoscale 10, 3697 (2018)

Ultrathin films of Ge on the Si(100)2 × 1 surface

M. Kamaratos
A.K. Sotiropoulos
D. Vlachos

Surface and Interface Analysis 50, 198 (2018)

Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice

Yi-Chia Tsai
Ming-Yi Lee
Yiming Li
Seiji Samukawa

IEEE Transactions on Electron Devices 64, 4547 (2017)

Highly tensile-strained Ge/InAlAs nanocomposites

Daehwan Jung
Joseph Faucher
Samik Mukherjee
Austin Akey
Daniel J. Ironside
Matthew Cabral
Xiahan Sang
James Lebeau
Seth R. Bank
Tonio Buonassisi
Oussama Moutanabbir
Minjoo Larry Lee

Nature Communications (2017) 8 (1)

Low-temperature formation of self-assembled Ge quantum dots on Si(100) under high carbon mediation via solid-phase epitaxy

Yuhki Itoh
Kaito Takeshima
Tomoyuki Kawashima
Katsuyoshi Washio

Materials Science in Semiconductor Processing (2017) 70: 167.

Emission characteristics of self-assembled strained Ge1−xSnxislands for sources in the optical communication region

Rajshekhar Bar
Ajit K Katiyar
Rakesh Aluguri
S K Ray

Nanotechnology 28, 295201 (2017)

Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

A.A. Shklyaev
A.E. Budazhapova

Materials Science in Semiconductor Processing (2017) 57: 18.

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Yuwen Jiang
Shufan Huang
Zhichao Zhu
Cheng Zeng
Yongliang Fan
Zuimin Jiang

Nanoscale Research Letters (2016) 11 (1)

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

A. A. Shklyaev
A. V. Latyshev

Nanoscale Research Letters (2016) 11 (1)

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

Yoshiaki Nakamura
Masakazu Ichikawa

Japanese Journal of Applied Physics 54, 07JD01 (2015)

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Alireza Samavati
M. K. Mustafa
Z. Othaman
S. K. Ghoshal
Mingliang Ren

Journal of Nanomaterials (2015) 2015 (1)

Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry

D.V. Yurasov
A.Yu. Luk׳yanov
P.V. Volkov
A.V. Goryunov
A.D. Tertyshnik
M.N. Drozdov
A.V. Novikov

Journal of Crystal Growth (2015) 413: 42.

Localization of electrons in dome-shaped GeSi/Si islands

A. I. Yakimov
V. V. Kirienko
A. A. Bloshkin
V. A. Armbrister
P. A. Kuchinskaya
A. V. Dvurechenskii

Applied Physics Letters (2015) 106 (3)

Hydrogen passivation of self-assembled Ge/Si quantum dots

A I Yakimov
V V Kirienko
V A Armbrister
A V Dvurechenskii

Semiconductor Science and Technology 29, 085011 (2014)

Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

A. B. Talochkin
V. I. Mashanov

Applied Physics Letters (2014) 105 (26)

Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

A. B. Talochkin
A. A. Shklyaev
V. I. Mashanov

Journal of Applied Physics (2014) 115 (14)

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

A. I. Yakimov
V. V. Kirienko
V. A. Armbrister
A. A. Bloshkin
A. V. Dvurechenskii

Physical Review B (2014) 90 (3)

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Eric G. Barbagiovanni
David J. Lockwood
Peter J. Simpson
Lyudmila V. Goncharova

Applied Physics Reviews 1, 011302 (2014)

Self-assembled thiolate functionalized gold nanoparticles template toward tailoring the morphology of electrochemically deposited silver nanostructure

Abdelhafed Taleb
Xue Yanpeng
Sorin Munteanu
Frederic Kanoufi
Pierre Dubot

Electrochimica Acta (2013) 88: 621.

The microstructural and optical properties of Ge/Si heterostructures grown by low-temperature molecular beam epitaxy

Vladimir V. Roddatis
Sergey N. Yakunin
Alexander L. Vasiliev
Mikhail V. Kovalchuk
Alexej Yu Seregin
Timur M. Burbaev
Michail N. Gordeev

Journal of Materials Research 28, 1432 (2013)

Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment

Seref Kalem
Peter Werner
Vadim Talalaev

Applied Physics A 112, 561 (2013)

Direct band gap optical emission from compressively strained Ge films grown on relaxed Si0.5Ge0.5 substrate

R. Aluguri
S. Manna
S. K. Ray

Applied Physics Letters (2013) 103 (16)

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Hung-Tai Chang
Bo-Lun Wu
Shao-Liang Cheng
Tu Lee
Sheng-Wei Lee

Nanoscale Research Letters (2013) 8 (1)

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

Kazuhiro Gotoh
Ryuji Oshima
Takeyoshi Sugaya
Isao Sakata
Koji Matsubara
Michio Kondo

Journal of Crystal Growth (2013) 378: 439.

Substrate Temperature Dependent Surface Morphology and Photoluminescence of Germanium Quantum Dots Grown by Radio Frequency Magnetron Sputtering

Alireza Samavati
Zulkafli Othaman
Sib Krishna Ghoshal
Mohammad Reza Dousti
Mohammed Rafiq Abdul Kadir

International Journal of Molecular Sciences 13, 12880 (2012)

Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements

A. D. Rodrigues
A. J. Chiquito
G. Zanelatto
A. G. Milekhin
A. I. Nikiforov
V. V. Ulyanov
O. P. Pchelyakov
D. R. T. Zahn
J. C. Galzerani

Advances in Condensed Matter Physics (2012) 2012: 1.

Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(001) substrate

Ke-Fan Wang
Yang Zhang
Weifeng Zhang

Applied Surface Science 258, 1935 (2012)

Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

Samavati Alireza
S. K. Ghoshal
Z. Othaman

Chinese Physics Letters 29, 048101 (2012)

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

Zhi Liu
Buwen Cheng
Weixuan Hu
Shaojian Su
Chuanbo Li
Qiming Wang

Nanoscale Research Letters (2012) 7 (1)

Ge quantum dots light-emitting devices

Jinsong Xia
Takuya Maruizumi
Yasuhiro Shiraki

Frontiers of Optoelectronics 5, 13 (2012)

Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source

S. Parola
E. Quesnel
V. Muffato
L. Guetaz
H. Szambolics
J. Bartringer
A. Slaoui

Journal of Nanoparticle Research (2012) 14 (9)

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

A Pérez del Pino
E György
I C Marcus
J Roqueta
M I Alonso

Nanotechnology 22, 295304 (2011)

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Vladimir A Yuryev
Larisa V Arapkina

Nanoscale Research Letters (2011) 6 (1)

Green-and-red photoluminescence from Si–Si and Ge–Ge bonded network homopolymers and copolymers

Michiya Fujiki
Masahiko Kato
Yoshiki Kawamoto
Giseop Kwak

Polymer Chemistry 2, 914 (2011)

Structural and optical study of Ge nanocrystals embedded in Si3N4 matrix

S. Lee
S. Huang
G. Conibeer
M.A. Green

Energy Procedia (2011) 10: 20.

Sub-10-nm multifacet domelike Ge quantum dots grown on clean Si (001) (2×1) surface

Ke-Fan Wang
Cheng-Xiao Peng
Wenhua Zhang
Weifeng Zhang

Applied Physics A 104, 573 (2011)

An initial phase of Ge hut array formation at low temperature on Si(001)

Larisa V. Arapkina
Vladimir A. Yuryev

Journal of Applied Physics (2011) 109 (10)

Overlayer Surface-Enhanced Raman Spectroscopy for Studying the Electrodeposition and Interfacial Chemistry of Ultrathin Ge on a Nanostructured Support

Azhar I. Carim
Junsi Gu
Stephen Maldonado

ACS Nano 5, 1818 (2011)

Controlling thermal conductance through quantum dot roughening at interfaces

Patrick E. Hopkins
John C. Duda
Christopher W. Petz
Jerrold A. Floro

Physical Review B (2011) 84 (3)

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

A. B. Talochkin
I. B. Chistokhin

Semiconductors 45, 907 (2011)

Metallic Nanostructure Formation Using Self-Assembled Chemically Anchored Gold Nanoparticles

Abdelhafed Taleb
Claire Mangeney
Valentina Ivanova

Journal of The Electrochemical Society 158, K28 (2011)

Ferromagnetism in Ge/SiO2 multilayer films

Congmian Zhen
Yuanbo Liu
Li Ma
Zhaoguang Pang
Chengfu Pan
Denglu Hou

Journal of Applied Physics (2010) 107 (4)

Ge quantum dot tunneling diode with room temperature negative differential resistance

M. Oehme
A. Karmous
M. Sarlija
J. Werner
E. Kasper
J. Schulze

Applied Physics Letters (2010) 97 (1)

Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio

M Grydlik
M Brehm
F Hackl
H Groiss
T Fromherz
F Schäffler
G Bauer

New Journal of Physics 12, 063002 (2010)

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only