Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

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Ti-based nonalloyed Ohmic contacts for ${Al}_{0.15} {Ga}_{0.85} N ∕ Ga N$ high electron mobility transistors using regrown $n^{+} - Ga N$ by plasma assisted molecular beam epitaxy

Appl. Phys. Lett. 93, 102102 (2008)

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Ti-based nonalloyed Ohmic contacts for ${Al}_{0.15} {Ga}_{0.85} N ∕ Ga N$ high electron mobility transistors using regrown $n^{+} - Ga N$ by plasma assisted molecular beam epitaxy

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Ti-based nonalloyed Ohmic contacts for ${Al}_{0.15} {Ga}_{0.85} N ∕ Ga N$ high electron mobility transistors using regrown $n^{+} - Ga N$ by plasma assisted molecular beam epitaxy