Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Skip Nav Destination

Appl. Phys. Lett. 87, 182105 (2005)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si(111) surface

Katsumi Nagaoka
Takashi Uchihashi
Tomonobu Nakayama

Surface Science (2016) 644: 41.

Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO3 Resistive Switches

Andrea Gerbi
Renato Buzio
Alessandro Gadaleta
Luca Anghinolfi
Michael Caminale
Emilio Bellingeri
Antonio Sergio Siri
Daniele Marré

Advanced Materials Interfaces (2014) 1 (3)

Direct Measurements of Lateral Variations of Schottky Barrier Height Across “End-On” Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission Microscopy

Wei Cai
Yulu Che
Jonathan P. Pelz
Eric R. Hemesath
Lincoln J. Lauhon

Nano Letters 12, 694 (2012)

Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes

M. A Yeganeh
Sh Rahmatallahpur
A Nozad
R. K Mamedov

Chinese Physics B 19, 107207 (2010)

Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

M. A Yeganeh
S. H Rahmatollahpur

Journal of Semiconductors 31, 074001 (2010)

Orientation Controlled Schottky Barrier Formation at Au Nanoparticle−SrTiO3 Interfaces

Ramsey Kraya
Laura Y. Kraya
Dawn A. Bonnell

Nano Letters 10, 1224 (2010)

Measurements of the quantum-confined conduction band energy in the wetting layer surrounding individualIn0.4Ga0.6Asquantum dots by cross-sectional ballistic electron emission microscopy

C. Marginean
J. P. Pelz
S. Y. Lehman
J. G. Cederberg

Physical Review B (2010) 82 (3)

Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayerPt/Al/SiO2interface

W. Cai
K.-B. Park
J. P. Pelz

Physical Review B (2009) 80 (16)

Nanoscale Electrical and Structural Characterization of Gold/Alkyl Monolayer/Silicon Diode Junctions

Marcus A. Kuikka
Wenjie Li
Karen L. Kavanagh
Hua-Zhong Yu

The Journal of Physical Chemistry C 112, 9081 (2008)

Hot electron transport and a quantitative study of ballistic electron magnetic imaging on Co/Cu multilayers

A. Kaidatzis
S. Rohart
A. Thiaville
J. Miltat

Physical Review B (2008) 78 (17)

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

F. Giannazzo
F. Roccaforte
V. Raineri

Microelectronic Engineering 84, 450 (2007)

Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes

W.-J. Li
K. L. Kavanagh
A. A. Talin
W. M. Clift
C. M. Matzke
J. W. P. Hsu

Journal of Applied Physics (2007) 102 (1)

Controlling Au/n‐GaAs junctions by partial molecular monolayers

Hossam Haick
Jonathan P. Pelz
Teresa Ligonzo
Marianna Ambrico
David Cahen
Wei Cai
Camelia Marginean
Cristian Tivarus
Raymond T. Tung

physica status solidi (a) 203, 3438 (2006)

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

K.-B. Park
Y. Ding
J. P. Pelz
P. G. Neudeck
A. J. Trunek

Applied Physics Letters (2006) 89 (4)

Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only