Comment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)] | Citedby Results | Applied Physics Letters | AIP Publishing

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Comment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)]

Appl. Phys. Lett. 109, 196101 (2016)

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