HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

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$Hf O_{2}$ high- $k$ dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

Appl. Phys. Lett. 87, 221906 (2005)

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$Hf O_{2}$ high- $k$ dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

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$Hf O_{2}$ high- $k$ dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability