Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors | Citedby Results | Applied Physics Letters | AIP Publishing

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Analysis of effective mobility and hall effect mobility in high-k based In_0.75Ga_0.25As metal-oxide-semiconductor high-electron-mobility transistors

Appl. Phys. Lett. 99, 232101 (2011)

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