High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation | Citedby Results | Applied Physics Letters | AIP Publishing

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High-resolution core-level photoemission study of ${CF}_{4}$ -treated ${Gd}_{2} O_{3} ({Ga}_{2} O_{3})$ gate dielectric on Ge probed by synchrotron radiation

Appl. Phys. Lett. 98, 062903 (2011)

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