SPACE‐CHARGE RECOMBINATION OSCILLATIONS IN DOUBLE‐INJECTION STRUCTURES | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

SPACE‐CHARGE RECOMBINATION OSCILLATIONS IN DOUBLE‐INJECTION STRUCTURES

Appl. Phys. Lett. 18, 241–244 (1971)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

R. Tiskumara
R. P. Joshi
D. Mauch
J. C. Dickens
A. A. Neuber

Journal of Applied Physics (2015) 118 (9)

Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes

Bhaskar Mantha
H.Thurman Henderson

Solid-State Electronics 23, 275 (1980)

Current oscillations due to filamentary double injection in diodes with deep levels

Ingo Dudeck
Rainer Kassing

Solid-State Electronics 22, 361 (1979)

Generation of coherent current pulses and delayed switching in relaxation GaAs p+-iν-n diodes

H. Okushi

Journal of Applied Physics 48, 5311 (1977)

Recombination oscillations in double-injection devices

J. Vasi
C.R. Westgate

Solid-State Electronics 17, 513 (1974)

Pulsed photoconductivity and current oscillations in poly(vinyl chloride)

J. H. Ranicar
R. J. Fleming

Journal of Polymer Science Part A-2: Polymer Physics 10, 1321 (1972)

Recombination instabilities in semiconductors doped with deep two-level traps

P. Antognetti
A. Chiabrera
S. Ridella

Journal of Applied Physics 43, 4676 (1972)

Semiconductors' characterization: Kinetics of one energy-level recombination centers and surface states

A. Chiabrera

Solid-State Electronics 15, 277 (1972)

Instabilities and small-signal response of double injection structures with deep traps

W.H. Weber
G.W. Ford

Solid-State Electronics 15, 1277 (1972)