Structural and compositional variations in ZnSnP2/GaAs superlattices | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

Structural and compositional variations in ${ZnSnP}_{2} /GaAs$ superlattices

Appl. Phys. Lett. 77, 2894–2896 (2000)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices

Thais Chagas
Guilherme A. S. Ribeiro
Bárbara L. T. Rosa
Danial Bahrami
Arman Davtyan
Rafael R. Barreto
Juan C. González
Rogério Magalhães-Paniago
Ângelo Malachias

ACS Applied Nano Materials 4, 12640 (2021)

Microstructural and light emission properties of ZnSnP2 thin film absorber: Study of native defects

S. Mukherjee
T. Maitra
A. Nayak
S. Mukherjee
A. Pradhan
M.K. Mukhopadhyay
B. Satpati
S. Bhunia

Materials Chemistry and Physics (2018) 204: 147.

Band offset at the heterojunction interfaces of CdS/ZnSnP2, ZnS/ZnSnP2, and In2S3/ZnSnP2

Shigeru Nakatsuka
Yoshitaro Nose
Yasuharu Shirai

Journal of Applied Physics (2016) 119 (19)

Solution-based synthesis and purification of zinc tin phosphide nanowires

Erik J. Sheets
Robert B. Balow
Wei-Chang Yang
Eric A. Stach
Rakesh Agrawal

Nanoscale 7, 19317 (2015)

Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

M. K. Yakes
S. B. Qadri
N. A. Mahadik
C. Yi
D. Lubyshev
J. M. Fastenau
A. W. K. Liu
E. H. Aifer

Applied Physics Letters (2012) 101 (24)

Linking computational and experimental studies of III–V quantum dots for optoelectronics and photovoltaics

A. V. Semichaevsky
R. S. Goldman
H. T. Johnson

JOM 63, 20 (2011)

Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusion

R S Goldman

Journal of Physics D: Applied Physics 37, R163 (2004)