Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

Improvement in electrical characteristics of high- $k$ ${Al}_{2} O_{3}$ gate dielectric by field-assisted nitric oxidation

Appl. Phys. Lett. 89, 232903 (2006)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

W.F. Lim
K.Y. Cheong
Z. Lockman

Thin Solid Films 519, 5139 (2011)

Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

Takashi Iwata
Taketoshi Matsumoto
Sumio Terakawa
Hikaru Kobayashi

Open Physics (2010) 8 (6)

Annealing effects on the structure and electrical characteristics of amorphous Er 2 O 3 films

Fang Ze-Bo
Zhu Yan-Yan
Wang Jia-Le
Jiang Zui-Min

Chinese Physics B 18, 3542 (2009)