Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

Skip Nav Destination

Bonding states and electrical properties of ultrathin ${HfO}_{x} N_{y}$ gate dielectrics

Appl. Phys. Lett. 81, 2593–2595 (2002)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Ultra-low subthreshold swing in oxide TFTs via HiPIMS high-k HfO2 gate dielectric using atmosphere annealing

Ming-Jie Zhao
Yao-Tian Wang
Jia-Hao Yan
Hai-Cheng Li
Hua Xu
Dong-Sing Wuu
Wan-Yu Wu
Yun-Shao Cho
Shui-Yang Lien

Applied Surface Science (2025) 685: 162068.

Structural, optical and phonon properties of hafnium oxynitride thin films synthesized using plasma-enhanced atomic layer deposition

Ayush Pratik
Robert Patterson
Gavin Conibeer
Santosh Shrestha

Journal of Alloys and Compounds (2024) 983: 173925.

Enhanced performance of MoS2 phototransistors with ferroelectric HfLaON as gate dielectric through NH3-plasma treatment followed by rapid thermal annealing

Weichao Jiang
Lu Liu
Jingping Xu

Ceramics International 50, 9234 (2024)

Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

Seung Kyu Ryoo
Beom Yong Kim
Yong Bin Lee
Hyeon Woo Park
Suk Hyun Lee
Minsik Oh
In Soo Lee
Seung Yong Byun
Doo Sup Shim
Jae Hoon Lee
Ha Ni Kim
Kyung Do Kim
Cheol Seong Hwang

Journal of Materials Chemistry C 11, 8018 (2023)

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films

Mirosław Puźniak
Wojciech Gajewski
Aleksandra Seweryn
Marcin T. Klepka
Bartłomiej S. Witkowski
Marek Godlewski
Robert Mroczyński

Materials 16, 2539 (2023)

Investigating Electronic, Optical, and Phononic Properties of Bulk γ-M2ON2 and β-M7O8N4 (M = Hf and Zr) Insulators Using Density Functional Theory

Bharat Thapa
Robert John Patterson
Gavin Conibeer
Santosh Shrestha

ACS Omega 7, 9196 (2022)

HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition

Chaoyi Yin
Meiping Zhu
Tingting Zeng
Chen Song
Yingjie Chai
Yuchuan Shao
Rongjun Zhang
Jiaoling Zhao
Dawei Li
Jianda Shao

Journal of Alloys and Compounds (2021) 859: 157875.

Nature of Nitrogen Incorporation in BiVO4 Photoanodes through Chemical and Physical Methods

Rowshanak Irani
Ibbi Y. Ahmet
Ji-Wook Jang
Sean P. Berglund
Paul Plate
Christian Höhn
Roman Böttger
Sebastian W. Schmitt
Catherine Dubourdieu
Sheikha Lardhi
Luigi Cavallo
Moussab Harb
Peter Bogdanoff
Roel van de Krol
Fatwa F. Abdi

Solar RRL (2020) 4 (1)

Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

Mirosław Puźniak
Wojtek Gajewski
Marcin Żelechowski
Jan Jamroz
Arkadiusz Gertych
Mariusz Zdrojek
Robert Mroczyński

Microelectronic Engineering (2020) 228: 111332.

Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

A. Joseph
G. Lilienkamp
T. F. Wietler
H. J. Osten

Journal of Electronic Materials 49, 6270 (2020)

Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

Ya-Wei Huan
Wen-Jun Liu
Xiao-Bing Tang
Xiao-Yong Xue
Xiao-Lei Wang
Qing-Qing Sun
Shi-Jin Ding

Nanoscale Research Letters (2019) 14 (1)

Synthesis of thermally stable HfO x N y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang
Taofei Pu
Tian Xie
Liuan Li
Yuyu Bu
Xiao Wang
Jin-Ping Ao

Chinese Physics B 27, 078503 (2018)

Improved performance of Au nanocrystal nonvolatile memory by N 2 -plasma treatment on HfO 2 blocking layer

Chen Wang
Yi-Hong Xu
Song-Yan Chen
Cheng Li
Jian-Yuan Wang
Wei Huang
Hong-Kai Lai
Rong-Rong Guo

Chinese Physics B 27, 067303 (2018)

Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition

S. Karwal
B. L. Williams
J.-P. Niemelä
M. A. Verheijen
W. M. M. Kessels
M. Creatore

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (2017) 35 (1)

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Zhenwei Wang
Pradipta K. Nayak
Jesus A. Caraveo‐Frescas
Husam N. Alshareef

Advanced Materials 28, 3831 (2016)

N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

Yong Huang
Jing-Ping Xu
Lu Liu
Pui-To Lai
Wing-Man Tang

IEEE Transactions on Electron Devices 63, 2838 (2016)

Enhanced mechanical properties of HfO2 film by nitrogen doping

P. Lei
S. Guo
J. Zhu
B. Dai
G. Liu
Y. Wang
J. Han

Surface Engineering 32, 585 (2016)

Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon

A. Joseph
D. Tetzlaff
J. Schmidt
R. Böttger
T. F. Wietler
H. J. Osten

Journal of Applied Physics (2016) 120 (14)

Light‐Addressable Potentiometric Sensor with Nitrogen‐Incorporated Ceramic Sm2O3Membrane for Chloride Ions Detection

Jer‐Chyi Wang
Yu‐Ren Ye
Yu‐Hsuan Lin
D. Johnson

Journal of the American Ceramic Society 98, 443 (2015)

Aluminum‐Doped Hafnium Oxynitride: Effect of Cation Doping on Oxygen‐Reduction‐Reaction Activity in Acid Media

Mitsuharu Chisaka
Hirokazu Muramoto

ChemElectroChem 1, 863 (2014)

Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering

Li-ping Feng
Ning Li
Hao Tian
Zheng-tang Liu

Journal of Materials Science 49, 1875 (2014)

Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering

Hao Tian
Li-ping Feng
Zheng-tang Liu

Vacuum (2014) 109: 139.

Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Ashwath Rao
Joyline D'sa
Saurabh Goyal
B. R. Singh

IEEE Transactions on Nuclear Science 61, 2397 (2014)

Hybrid anion and cation ion sensors with samarium oxide sensing membrane treated by nitrogen plasma immersion ion implantation

Jer-Chyi Wang
Yu-Hsuan Lin
Yu-Ren Ye
Chao-Sung Lai
Chi-Fong Ai
Wen-Fa Tsai

Sensors and Actuators B: Chemical (2014) 191: 666.

Effect of hydrogen participation on the improvement in electrical characteristics of HfO2gate dielectrics by post-deposition remote N2, N2/H2, and NH3plasma treatments

Li-Tien Huang
Ming-Lun Chang
Jhih-Jie Huang
Chin-Lung Kuo
Hsin-Chih Lin
Ming-Han Liao
Min-Hung Lee
Miin-Jang Chen

Journal of Physics D: Applied Physics 46, 055103 (2013)

Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Li-Tien Huang
Ming-Lun Chang
Jhih-Jie Huang
Hsin-Chih Lin
Chin-Lung Kuo
Min-Hung Lee
Chee Wee Liu
Miin-Jang Chen

Applied Surface Science (2013) 266: 89.

Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate

T. Yu
C. G. Jin
Y. Yang
L. J. Zhuge
X. M. Wu
Z. F. Wu

Journal of Applied Physics (2013) 113 (4)

Effect of Surface Microstructure on the Oxidation Stability of Cu3N Thin Film

Davoud Dorranian
Laya Dejam

Molecular Crystals and Liquid Crystals 575, 49 (2013)

Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering

H.S. Han
D.H. Han
S. Ohmi

Electronics Letters 49, 500 (2013)

Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment

Jer-Chyi Wang
Chia-Hsin Chen
Hsiang-Yu Liu
Chih-Ting Lin
Hsin-Chun Lu

Microelectronic Engineering (2013) 109: 120.

Effect of nitrogen passivation on the interfacial property and band offset of HfLaO/SiGe

Y Yang
C G Jin
L J Zhuge
H Y Zhang
Z F Wu
X M Wu
T Yu

Journal of Physics D: Applied Physics 46, 505312 (2013)

Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

Ayan Roy Chaudhuri
A. Fissel
H. J. Osten

Journal of Applied Physics (2013) 113 (18)

Influences of different oxidants on the characteristics of HfAlOxfilms deposited by atomic layer deposition

Ji-Bin Fan
Hong-Xia Liu
Fei Ma
Qing-Qing Zhuo
Yue Hao

Chinese Physics B 22, 027702 (2013)

Effect of annealing on composition, structure and optical properties of SrHfON thin films

Li-ping Feng
Yin-quan Wang
Hao Tian
Zheng-tang Liu

Applied Surface Science 258, 9706 (2012)

Temperature dependence of chemical states and band alignments in ultrathin HfOxNy/Si gate stacks

X J Wang
M Liu
L D Zhang

Journal of Physics D: Applied Physics 45, 335103 (2012)

Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD

Jibin Fan
Hongxia Liu
Qianwei Kuang
Bo Gao
Fei Ma
Yue Hao

Microelectronics Reliability 52, 1043 (2012)

Defect compensation in LaAlO3 perovskite-based high dielectric constant oxides

H. Li
J. Robertson

Journal of Applied Physics (2012) 112 (3)

Cross characterization of ultrathin interlayers in HfO2 high-k stacks by angle resolved x-ray photoelectron spectroscopy, medium energy ion scattering, and grazing incidence extreme ultraviolet reflectometry

Matus Banyay
Larissa Juschkin
Eric Bersch
Daniel Franca
Michael Liehr
Alain Diebold

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (2012) 30 (4)

In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

Takahiro Sano
Shun-ichiro Ohmi

Japanese Journal of Applied Physics 50, 04DA09 (2011)

Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

Min Liao
Hiroshi Ishiwara
Shun-ichiro Ohmi

IEEE Electron Device Letters 32, 1600 (2011)

Material properties and effective work function of reactive sputtered TaN gate electrodes

Manhong Zhang
Zongliang Huo
Qin Wang
Ming Liu

Journal of Semiconductors 32, 053005 (2011)

Effect of Synthesis Route on Oxygen Reduction Reaction Activity of Carbon-Supported Hafnium Oxynitride in Acid Media

Mitsuharu Chisaka
Yuta Suzuki
Tomohiro Iijima
Yoji Sakurai

The Journal of Physical Chemistry C 115, 20610 (2011)

Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Hu Ai-Bin
Xu Qiu-Xia

Chinese Physics B 19, 057302 (2010)

Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfOxNy gate dielectric

Xiao Zou
Guojia Fang
Longyan Yuan
Xingsheng Tong
Xingzhong Zhao

Microelectronics Reliability 50, 954 (2010)

A comparative study of amorphous InGaZnO thin-film transistors with HfOxNyand HfO2gate dielectrics

Xiao Zou
Guojia Fang
Longyan Yuan
Xingsheng Tong
Xingzhong Zhao

Semiconductor Science and Technology 25, 055006 (2010)

Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

Changhwan Choi
Jack C. Lee

Journal of Applied Physics (2010) 108 (6)

Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu O and HfO2/SiO2 high-κ stack gate dielectrics

Xiao Zou
Guojia Fang
Longyan Yuan
Nishuang Liu
Hao Long
Xingzhong Zhao

Thin Solid Films 518, 4446 (2010)

Interface characterization of a metal‐oxide‐semiconductor structure by biased X‐ray photoelectron spectroscopy

M. Yoshitake
K. Ohmori
T. Chikyow

Surface and Interface Analysis 42, 70 (2010)

Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films

M. Liu
L. D. Zhang
G. He
X. J. Wang
M. Fang

Journal of Applied Physics (2010) 108 (2)

High-k HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method

Pai-Chi Chou
Chao-Sung Lai
Jer-Chyi Wang
Woei-Cherng Wu
Li-Chi Liu
Yu-Ching Fang
Li Hsu
Hui-Chun Wang

Japanese Journal of Applied Physics 48, 05DF01 (2009)

Bonding states and electrical properties of ultrathin ${HfO}_{x} N_{y}$ gate dielectrics

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only

Bonding states and electrical properties of ultrathin ${HfO}_{x} N_{y}$ gate dielectrics