Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

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Pulsed atomic-layer epitaxy of ultrahigh-quality ${Al}_{x} {Ga}_{1−x} N$ structures for deep ultraviolet emissions below 230 nm

Appl. Phys. Lett. 81, 4392–4394 (2002)

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Pulsed atomic-layer epitaxy of ultrahigh-quality ${Al}_{x} {Ga}_{1−x} N$ structures for deep ultraviolet emissions below 230 nm

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Pulsed atomic-layer epitaxy of ultrahigh-quality ${Al}_{x} {Ga}_{1−x} N$ structures for deep ultraviolet emissions below 230 nm