Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

Skip Nav Destination

Appl. Phys. Lett. 79, 1474–1476 (2001)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Study of intermixing effects in Ge/Si(001) growth using kinetic Monte Carlo simulations

Nidhi Gupta
Madhav Ranganathan

Journal of Crystal Growth (2022) 583: 126555.

Shape-fitting analyses of two-dimensional X-ray diffraction spots for strain-distribution evaluation in a β-FeSi2 nanofilm

Shohei Takemoto
Ken Hattori
Masaaki Someta
Azusa N. Hattori
Hidekazu Tanaka
Kosuke Kurushima
Yuji Otsuka
Hiroshi Daimon

Journal of Applied Crystallography 52, 732 (2019)

Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

S.S. Ponomaryov

Semiconductor Physics Quantum Electronics and Optoelectronics 19, 321 (2016)

Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects

D. Grigoriev
S. Lazarev
P. Schroth
A.A. Minkevich
M. Köhl
T. Slobodskyy
M. Helfrich
D.M. Schaadt
T. Aschenbrenner
D. Hommel
T. Baumbach

Journal of Applied Crystallography 49, 961 (2016)

Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy

Semyon S. Ponomaryov
Volodymyr O. Yukhymchuk
Peter M. Lytvyn
Mykhailo Ya Valakh

Nanoscale Research Letters (2016) 11 (1)

Si/Ge intermixing during Ge Stranski–Krastanov growth

Alain Portavoce
Khalid Hoummada
Antoine Ronda
Dominique Mangelinck
Isabelle Berbezier

Beilstein Journal of Nanotechnology (2014) 5: 2374.

Growth and self-organization of SiGe nanostructures

J.-N. Aqua
I. Berbezier
L. Favre
T. Frisch
A. Ronda

Physics Reports 522, 59 (2013)

Ge atom distribution in buried dome islands

A. Portavoce
K. Hoummada
I. Berbezier
A. Ronda
D. Mangelinck

Applied Physics Letters (2012) 100 (16)

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars

P Zaumseil
G Kozlowski
M A Schubert
Y Yamamoto
J Bauer
T U Schülli
B Tillack
T Schroeder

Nanotechnology 23, 355706 (2012)

Compositional mapping of semiconductor quantum dots and rings

Giorgio Biasiol
Stefan Heun

Physics Reports 500, 117 (2011)

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

M.-I. Richard
A. Malachias
J.-L. Rouvière
T.-S. Yoon
E. Holmström
Y.-H. Xie
V. Favre-Nicolin
V. Holý
K. Nordlund
G. Renaud
T.-H. Metzger

Physical Review B (2011) 84 (7)

Nanometer-scale mapping of the strain and Ge content of Ge/Si quantum dots using enhanced Raman scattering by the tip of an atomic force microscope

Y. Ogawa
T. Toizumi
F. Minami
A. V. Baranov

Physical Review B (2011) 83 (8)

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Alexandre Miranda P. dos Anjos
Ioshiaki Doi
Jose Alexandre Diniz

e-Journal of Surface Science and Nanotechnology (2009) 7: 301.

MBE growth conditions for Si island formation on Ge (001) substrates

D. Pachinger
H. Lichtenberger
G. Chen
J. Stangl
G. Hesser
F. Schäffler

Thin Solid Films 517, 62 (2008)

Enhanced infrared response of Si base p–n diode with self-assembled Ge quantum dots by thermal annealing

Qijia Cai
Hao Zhou
Fang Lu

Applied Surface Science 254, 3376 (2008)

Shape oscillations: A walk through the phase diagram of strained islands

M. Stoffel
A. Rastelli
J. Stangl
T. Merdzhanova
G. Bauer
O. G. Schmidt

Physical Review B (2007) 75 (11)

First-principles study of adsorption and diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) surfaces

Li Huang
Guang-Hong Lu
Feng Liu
X.G. Gong

Surface Science 601, 3067 (2007)

Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods

J. T. Robinson
D. A. Walko
D. A. Arms
D. S. Tinberg
P. G. Evans
Y. Cao
J. A. Liddle
A. Rastelli
O. G. Schmidt
O. D. Dubon

Physical Review Letters (2007) 98 (10)

Multiple confined‐state transitions within surface quantum dots by a piezomodulation reflectance study

C. H. Yu
C. Wang
B. Zhang
Q. Gong
Y. J. Li
W. Lu
S. C. Shen

physica status solidi (a) 204, 1171 (2007)

Ge dots and nanostructures grown epitaxially on Si

J-M Baribeau
X Wu
N L Rowell
D J Lockwood

Journal of Physics: Condensed Matter 18, R139 (2006)

Surface Mobility Difference between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands

Li Huang
Feng Liu
Guang-Hong Lu
X. G. Gong

Physical Review Letters (2006) 96 (1)

Alloying of self-organized semiconductor 3D islands

Fulvio Ratto
Giovanni Costantini
Armando Rastelli
Oliver G. Schmidt
Klaus Kern
Federico Rosei

Journal of Experimental Nanoscience 1, 279 (2006)

Atomic composition profile change of SiGe islands during Si capping

F. H. Li
Y. L. Fan
X. J. Yang
Z. M. Jiang
Y. Q. Wu
J. Zou

Applied Physics Letters (2006) 89 (10)

Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

T. U. Schülli
M. Stoffel
A. Hesse
J. Stangl
R. T. Lechner
E. Wintersberger
M. Sztucki
T. H. Metzger
O. G. Schmidt
G. Bauer

Physical Review B (2005) 71 (3)

Optical properties of InAs∕GaAs surface quantum dots

Z. L. Miao
Y. W. Zhang
S. J. Chua
Y. H. Chye
P. Chen
S. Tripathy

Applied Physics Letters (2005) 86 (3)

Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying

U. Denker
A. Rastelli
M. Stoffel
J. Tersoff
G. Katsaros
G. Costantini
K. Kern
N. Y. Jin-Phillipp
D. E. Jesson
O. G. Schmidt

Physical Review Letters (2005) 94 (21)

X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures

Till Hartmut Metzger
Tobias Urs Schülli
Martin Schmidbauer

Comptes Rendus. Physique 6, 47 (2005)

Shape and Composition Map of a Prepyramid Quantum Dot

B. J. Spencer
M. Blanariu

Physical Review Letters (2005) 95 (20)

Advances in the growth and characterization of Ge quantum dots and islands

J-M. Baribeau
N.L. Rowell
D.J. Lockwood

Journal of Materials Research 20, 3278 (2005)

Ge ∕ Si islands in a three-dimensional island crystal studied by x-ray diffraction

J. Novák
V. Holý
J. Stangl
T. Fromherz
Zhenyang Zhong
Gang Chen
G. Bauer
B. Struth

Journal of Applied Physics (2005) 98 (7)

Kinetic origin of island intermixing during the growth of Ge on Si(001)

G. Katsaros
G. Costantini
M. Stoffel
R. Esteban
A. M. Bittner
A. Rastelli
U. Denker
O. G. Schmidt
K. Kern

Physical Review B (2005) 72 (19)

Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure–chemical vapor deposition

J.M. Hartmann
F. Bertin
G. Rolland
M.N. Séméria
G. Brémond

Thin Solid Films 479, 113 (2005)

Intermixing in Ge hut cluster islands

U. Denker
H. Sigg
O.G. Schmidt

Applied Surface Science 224, 127 (2004)

ABAB organization of Ge∕Si(001) islands in multiplanes grown with low pressure chemical vapor deposition

O. Kermarrec
Y. Campidelli
D. Bensahel

Journal of Applied Physics 96, 6175 (2004)

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

J.-M. Baribeau
N.L. Rowell
D.J. Lockwood

MRS Proceedings (2004) 832

Aspect ratio of liquid phase epitaxial SiGe∕Si(001) islands as probed by high resolution x-ray diffraction

M. Hanke
M. Schmidbauer
D. Grigoriev
R. Köhler

Journal of Applied Physics 96, 1447 (2004)

Finite-element modelling of non-destructive material evaluation, an addendum: a bibliography (1997–2003)

Jaroslav Mackerle

Modelling and Simulation in Materials Science and Engineering 12, 799 (2004)

Shape and composition change of Ge dots due to Si capping

O. Kirfel
E. Müller
D. Grützmacher
K. Kern
A. Hesse
J. Stangl
V. Holý
G. Bauer

Applied Surface Science 224, 139 (2004)

SiGe/Si(001) Stranski-Krastanow islands by liquid-phase epitaxy: Diffuse x-ray scattering versus growth observations

M. Hanke
M. Schmidbauer
D. Grigoriev
H. Raidt
P. Schäfer
R. Köhler
A.-K. Gerlitzke
H. Wawra

Physical Review B (2004) 69 (7)

Grazing incidence x-ray diffraction and atomic force microscopy investigations of germanium dots grown on silicon (001) by successive depositions of germanium through a thin silicon oxide layer

M. Derivaz
P. Noé
R. Dianoux
A. Barski
A. Coati
Y. Garreau
C. Alandi

Applied Physics Letters 84, 3295 (2004)

Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction

J. Stangl
A. Hesse
V. Holý
Z. Zhong
G. Bauer
U. Denker
O. G. Schmidt

Applied Physics Letters 82, 2251 (2003)

Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si(001) islands: An atomistic simulation study

Maxim A. Makeev
Wenbin Yu
Anupam Madhukar

Physical Review B (2003) 68 (19)

Successful shape-preservation of Ge-clusters during Si-coverage at low temperature

E. Müller
O. Kirfel
A. Rastelli
H. von Känel
D. Grützmacher

Materials Science and Engineering: B 101, 142 (2003)

Structural investigation of semiconductor nanostructures by X-ray techniques

J. Stangl
A. Hesse
T. Roch
V. Holý
G. Bauer
T. Schuelli
T.H. Metzger

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2003) 200: 11.

Probing the Lateral Composition Profile of Self-Assembled Islands

U. Denker
M. Stoffel
O. G. Schmidt

Physical Review Letters (2003) 90 (19)

Influence of capping on strain, composition and shape of SiGe islands

A. Hesse
J. Stangl
V. Holý
G. Bauer
O. Kirfel
E. Müller
D. Grützmacher

Materials Science and Engineering: B 101, 71 (2003)

Composition of self assembled Ge hut clusters

U. Denker
H. Sigg
O.G. Schmidt

Materials Science and Engineering: B 101, 89 (2003)

Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping

A Malachias
W N Rodrigues
M V B Moreira
S Kycia
R Magalh es-Paniago

Journal of Physics D: Applied Physics 36, A249 (2003)

Epitaxial Growth of Strained Nanocrystals

G. Medeiros-Ribeiro

physica status solidi (b) 230, 443 (2002)

X-Ray Diffuse Scattering on Self-Organized Mesoscopic Structures

M. Schmidbauer
M. Hanke
R. Köhler

Crystal Research and Technology 37, 3 (2002)

Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only