Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Skip Nav Destination

Appl. Phys. Lett. 77, 2180–2182 (2000)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

GaNP-based photovoltaic device integrated on Si substrate

Liliia N. Dvoretckaia
Alexey D. Bolshakov
Alexey M. Mozharov
Maxim S. Sobolev
Demid A. Kirilenko
Artem I. Baranov
Vladimir Yu Mikhailovskii
Vladimir V. Neplokh
Ivan A. Morozov
Vladimir V. Fedorov
Ivan S. Mukhin

Solar Energy Materials and Solar Cells (2020) 206: 110282.

Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

A. M. Mozharov
D. A. Kudryashov
A. D. Bolshakov
G. E. Cirlin
A. S. Gudovskikh
I. S. Mukhin

Semiconductors 50, 1521 (2016)

Bandgap evolution of GaN1−x As x in the whole composition range

Chuan-Zhen Zhao
Na-Na Li
Tong Wei
Sha-Sha Wang
Ke-Qing Lu

Applied Physics A 115, 927 (2014)

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

Y. J. Kuang
S. Sukrittanon
H. Li
C. W. Tu

Applied Physics Letters (2012) 100 (5)

Quantum size effect on excitons in GaxIn1−xP/GaAs quantum well

P. Poothathan
Chang Woo Lee
A. John Peter

Physica E: Low-dimensional Systems and Nanostructures 43, 1272 (2011)

Band alignments of InGaPN/GaPN quantum well structures on GaP and Si

Kazuyuki Umeno
Sung Man Kim
Yuzo Furukawa
Hiroo Yonezu
Akihiro Wakahara

Journal of Crystal Growth (2007) 301-302: 539.

Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy

V. A. Odnoblyudov
C. W. Tu

Applied Physics Letters (2006) 89 (11)

Difference of N concentrations in GaPN layers simultaneously grown on Si and GaP substrates

Atsushi Utsumi
Yuzo Furukawa
Hiroo Yonezu
Akihiro Wakahara

Journal of Crystal Growth 295, 12 (2006)

Improvement of crystalline quality of GaPN layers grown by RF‐plasma MBE with ion collector

A. Utsumi
Y. Furukawa
H. Yonezu
Y. Yoshizumi
Y. Morita
A. Wakahara

physica status solidi (a) 202, 758 (2005)

Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition

H. D. Li
M. Tsukihara
Y. Naoi
Y. B. Lee
S. Sakai

Applied Physics Letters 84, 1886 (2004)

Band parameters for nitrogen-containing semiconductors

I. Vurgaftman
J. R. Meyer

Journal of Applied Physics 94, 3675 (2003)

Pseudopotential theory of dilute III V nitrides

P R C Kent
L Bellaiche
Alex Zunger

Semiconductor Science and Technology 17, 851 (2002)

Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

H.P Xin
R.J Welty
Y.G Hong
C.W Tu

Journal of Crystal Growth (2001) 227-228: 558.

Theory of electronic structure evolution in GaAsN and GaPN alloys

P. R. C. Kent
Alex Zunger

Physical Review B (2001) 64 (11)

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman
J. R. Meyer
L. R. Ram-Mohan

Journal of Applied Physics 89, 5815 (2001)

Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only