Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate | Citedby Results | Applied Physics Letters | AIP Publishing

Skip to Main Content

Skip Nav Destination

Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate

Appl. Phys. Lett. 76, 703–705 (2000)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

S.H. Christiansen
R. Singh
U. Gosele

Proceedings of the IEEE 94, 2060 (2006)

Artificial GeSi substrates for heteroepitaxy: Achievements and problems

Yu. B. Bolkhovityanov
O. P. Pchelyakov
L. V. Sokolov
S. I. Chikichev

Semiconductors 37, 493 (2003)

High quality GaAs grown on Si-on-insulator compliant substrates

C. W. Pei
J. B. Héroux
J. Sweet
W. I. Wang
J. Chen
M. F. Chang

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20, 1196 (2002)

Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates

C. W. Pei
B. Turk
W. I. Wang
T. S. Kuan

Journal of Applied Physics 90, 5959 (2001)

Compliant substrates: a review on the concept, techniques and mechanisms

A Bourret

Applied Surface Science 164, 3 (2000)

Compliant substrate technology: Integration of mismatched materials for opto-electronic applications

K. Vanhollebeke
I. Moerman
P. Van Daele
P. Demeester

Progress in Crystal Growth and Characterization of Materials 41, 1 (2000)

Elastic energy approach to the strain relaxation mechanism by dislocation splitting and slip in twist-bonded substrates

Y. Obayashi
K. Shintani

Journal of Applied Physics 88, 5623 (2000)