In the original published article,1, Fig. 2(a) is adapted from Dr. Vadim Shlyonsky’s design in Fig. 1(b),2,3 without proper citation or authorization. This erratum of the article lists the components in the original article and their corresponding parts in Dr. Vadim Shlyonsky’s design (Table I, adapted with permission under License No. 5663970149230).

FIG. 2.

High pass shelf filter low noise acquisition circuit diagram and simulation. (a) The circuit diagram of two-stage low noise and high-speed trans-impedance amplifier. (b) LTspice simulation of the first-stage TIA circuit. (c) LTspice simulation result of the high pass shelf filter. (d) The improved overall circuit simulation diagram.

FIG. 2.

High pass shelf filter low noise acquisition circuit diagram and simulation. (a) The circuit diagram of two-stage low noise and high-speed trans-impedance amplifier. (b) LTspice simulation of the first-stage TIA circuit. (c) LTspice simulation result of the high pass shelf filter. (d) The improved overall circuit simulation diagram.

Close modal
TABLE I.

List of components in the reused circuit.

Components in Fig. 2(a) Components in Fig. 1(b)
(original published article1)(Dr. Vadim Shlyonsky’s design2)
A1(ADA4530-1, SOIC8) U1 (ADA4817-1, SOIC + DIP8 adaptor) 
RF(1 G, HVC1206Z1007KET) Rf (1 G, 0207 radial through-hole or 2010 smd) 
R (499, 1206) Null 
R1(6 k, 20 k, EVM3 smd) P1 (6 k, 20 k, 3296 W) 
R2(51, 500, EVM3 smd) P2 (14, 500, 3296 W) 
R3(6 k, 20 k, EVM3 smd) P3 (6 k, 20 k, 3296 W) 
C1(100 n, 0805) C1 (100 n, 0805) 
C2(10 μ, 0805) C2 (10 μ, 0805) 
A2(LT1128, SOP23) U2 (LM6211, SOP23 + DIP8 adaptor) 
R4(474, 20 k, EVM3 smd) Rg1, 2, 3 (10 k, 2 k, 2 k, 3296 W) 
R5(47 k, 0805) Rf (47 k, 0805) 
A3(LT1122, SOIC) U5 (LT1122, DIP8) 
C3(10 p, 0805) Cf (10 p, 0805) 
Components in Fig. 2(a) Components in Fig. 1(b)
(original published article1)(Dr. Vadim Shlyonsky’s design2)
A1(ADA4530-1, SOIC8) U1 (ADA4817-1, SOIC + DIP8 adaptor) 
RF(1 G, HVC1206Z1007KET) Rf (1 G, 0207 radial through-hole or 2010 smd) 
R (499, 1206) Null 
R1(6 k, 20 k, EVM3 smd) P1 (6 k, 20 k, 3296 W) 
R2(51, 500, EVM3 smd) P2 (14, 500, 3296 W) 
R3(6 k, 20 k, EVM3 smd) P3 (6 k, 20 k, 3296 W) 
C1(100 n, 0805) C1 (100 n, 0805) 
C2(10 μ, 0805) C2 (10 μ, 0805) 
A2(LT1128, SOP23) U2 (LM6211, SOP23 + DIP8 adaptor) 
R4(474, 20 k, EVM3 smd) Rg1, 2, 3 (10 k, 2 k, 2 k, 3296 W) 
R5(47 k, 0805) Rf (47 k, 0805) 
A3(LT1122, SOIC) U5 (LT1122, DIP8) 
C3(10 p, 0805) Cf (10 p, 0805) 

In previous work, we designed a low-noise pA level current detection circuit based on ADA4530-1 and applied it to our nanopore fabrication system. However, its bandwidth is 500 Hz, and there are few detection points per second. Then, we referred to the design of the high pass shelf filter circuit in Dr. Vadim Shlyonsky’s article and Supporting Information.

  1. Nanopore sensing with only one amplifier can be performed by directly applying the clamp voltage to the nanopore [as shown in Fig. 2(a), ADA4530-1].

  2. Referring to the high pass shelf filter circuit of Dr. Vadim Shlyonsky’s article solves the problem of bandwidth expansion, and most of the components are based on Dr. Vadim Shlyonsky’s design as shown in Table I.

In our design, we also designed grounding wires and increased amplifier output series resistance (R, 499 Ω, 1206) to prevent amplifier oscillation based on the device characteristics of ADA4530-1. Finally, the design of a low-noise and high-speed trans-impedance amplifier for the nanopore sensor was completed.

1.
S.
Fang
,
B.
Yin
,
W.
Xie
,
S.
He
,
L.
Liang
,
P.
Tang
,
R.
Tian
,
T.
Weng
,
J.
Yuan
, and
D.
Wang
, “
Low-noise and high-speed trans-impedance amplifier for nanopore sensor
,”
Rev. Sci. Instrum.
94
,
074704
(
2023
).
2.
V.
Shlyonsky
and
D.
Gall
, “
The OpenPicoAmp-100k: An open-source high-performance amplifier for single channel recording in planar lipid bilayers
,”
Pflügers Arch. Eur. J. Physiol.
471
,
1467
1480
(
2019
).
3.
See https://certification.oshwa.org/be000002.html for more information about Dr. Vadim Shlyonsky’s OpenPicoAmp–100k.