High-precision finishing method for narrow-groove channel-cut crystal x-ray monochromator using plasma chemical vaporization machining with wire electrode

A channel-cut crystal monochromator (CCM) is a popular and powerful device for producing monochromatic x-ray beams with extreme angular stability at a nano-radian level. Narrowing the groove width of CCMs has various benefits; for example, it is made possible to design more compact CCMs with an equivalent working energy range and to reduce the optical delay and the amount of beam shift, enhancing compatibility with various experimental techniques. An obstacle to the use of narrow-groove CCMs is the lack of a high-precision finishing method for the inner-wall reflecting surfaces, which imposes the distortion of x-ray wavefronts and spectral purity. We propose a new, damage-free surface-finishing method for silicon CCMs with a narrow groove of 1 mm or less with a localized etching technique using plasma generated with a wire electrode of 50 µm diameter under atmospheric pressure. Repeating plasma-on and plasma-off periods with a pulsed power supply, we reduce the concentration of reaction products through self-diffusion during the plasma-off periods and minimize the redeposition of the products on the processed surface that deteriorates the surface roughness. Under optimized conditions, we processed a CCM with a groove width of 1.2 mm, which has uniform reflection profiles and a nearly ideal reflectivity behavior for coherent monochromatic x rays.