Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micrometer wire by etching. We have established techniques to fabricate the wire made of the fragile 2DEG by combining photolithography and electron beam lithography with one-step photoresist coating, which enables us to etch fine and coarse structures simultaneously. It has been demonstrated that the fabricated single electron source pumps a fixed number of electrons per cycle with radio frequency. The fabrication technique improves the lithography process with lower risk of damage to the 2DEG.
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August 2020
Research Article|
August 13 2020
Etching process of narrow wire and application to tunable-barrier electron pump Available to Purchase
Shota Norimoto
;
Shota Norimoto
a)
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Shuichi Iwakiri
;
Shuichi Iwakiri
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
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Masahiko Yokoi
;
Masahiko Yokoi
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
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Tomonori Arakawa
;
Tomonori Arakawa
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
2
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University
, Toyonaka, Osaka 560-8531, Japan
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Yasuhiro Niimi
;
Yasuhiro Niimi
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
2
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University
, Toyonaka, Osaka 560-8531, Japan
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Kensuke Kobayashi
Kensuke Kobayashi
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
3
Institute for Physics of Intelligence and Department of Physics, The University of Tokyo
, Bunkyo-ku, Tokyo 113-0033, Japan
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Shota Norimoto
1,a)
Shuichi Iwakiri
1
Masahiko Yokoi
1
Tomonori Arakawa
1,2
Yasuhiro Niimi
1,2
Kensuke Kobayashi
1,3
1
Graduate School of Science, Osaka University
, Toyonaka, Osaka 560-0043, Japan
2
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University
, Toyonaka, Osaka 560-8531, Japan
3
Institute for Physics of Intelligence and Department of Physics, The University of Tokyo
, Bunkyo-ku, Tokyo 113-0033, Japan
a)Author to whom correspondence should be addressed: [email protected]
Rev. Sci. Instrum. 91, 085110 (2020)
Article history
Received:
April 24 2020
Accepted:
July 16 2020
Citation
Shota Norimoto, Shuichi Iwakiri, Masahiko Yokoi, Tomonori Arakawa, Yasuhiro Niimi, Kensuke Kobayashi; Etching process of narrow wire and application to tunable-barrier electron pump. Rev. Sci. Instrum. 1 August 2020; 91 (8): 085110. https://doi.org/10.1063/5.0011767
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