We present a planar, scalable magnetic field source, originally conceived for a chip ion trap. It consists of two symmetric sections, each with several independent currents arranged in coplanar, concentric rectangular loops. The currents allow for tuning the strength of the field and its lowest-order derivatives at one discretional position along the source’s vertical symmetry axis, a few mm above its surface. We describe the construction and calibration of the device and the cryogenic setup. The two most important current configurations for a Penning ion trap, the homogeneous field and the magnetic bottle, are investigated experimentally. Homogeneous fields around 0.5 T are routinely reached. We discuss the maximum attainable field, and we briefly describe ongoing further developments aiming at homogeneous fields well above 1 T.
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October 2020
Research Article|
October 14 2020
Planar, strong magnetic field source for a chip ion trap
Jonathan Pinder
;
Jonathan Pinder
1
Department of Physics and Astronomy, University of Sussex
, Falmer BN1 9QH, United Kingdom
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John H. Lacy
;
John H. Lacy
2
Physics Department, Williams College
, Williamstown, Massachusetts 01267, USA
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Ryan Willetts
;
Ryan Willetts
1
Department of Physics and Astronomy, University of Sussex
, Falmer BN1 9QH, United Kingdom
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April Cridland Mathad
;
April Cridland Mathad
3
Physics Department, Swansea University
, Swansea SA2 8PP, United Kingdom
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Alberto Uribe
;
Alberto Uribe
1
Department of Physics and Astronomy, University of Sussex
, Falmer BN1 9QH, United Kingdom
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José Verdú
José Verdú
a)
1
Department of Physics and Astronomy, University of Sussex
, Falmer BN1 9QH, United Kingdom
a)Author to whom correspondence should be addressed: jlv20@sussex.ac.uk
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a)Author to whom correspondence should be addressed: jlv20@sussex.ac.uk
Rev. Sci. Instrum. 91, 103201 (2020)
Article history
Received:
August 11 2020
Accepted:
September 30 2020
Citation
Jonathan Pinder, John H. Lacy, Ryan Willetts, April Cridland Mathad, Alberto Uribe, José Verdú; Planar, strong magnetic field source for a chip ion trap. Rev. Sci. Instrum. 1 October 2020; 91 (10): 103201. https://doi.org/10.1063/5.0024735
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