Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode Available to Purchase

The results of the investigation involving a thyristor switch triggered in the impact ionization wave mode are presented. This switch is intended for operation as a primary switch in a nanosecond pulse generator with a semiconductor opening switch (SOS). The thyristor switch is based on commercial low-frequency tablet thyristors stacked in a joint assembly of up to 6 pieces connected in series. At a charging voltage of 2–12 kV and switching energy of up to 16 J, the switch operates with a discharge current of up to 8 kA, a current rise rate in the range from 14 to 54 kA/μs, and a switching efficiency of ∼0.9. It is shown that an increase in a voltage rise rate on thyristors at the triggering stage reduces energy loss in the thyristor switch during the current flow. The SOS pumping circuit contains one magnetic element—a pulse transformer, which simplifies the generator and increases its efficiency. The SOS generator has an output voltage of up to 300 kV and a peak power of up to 250 MW with a pulse duration of ∼50 ns. The thyristor switch in the generator operates at a voltage of 12 kV and provides current flow with the amplitude of up to 7.5 kA with a duration of ∼500 ns and a current rise rate of ∼54 kA/μs. The pulse repetition frequency of the generator is 1 kHz in the burst mode of operation.