A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

Topics
Doping, Superconductivity, Diamond anvil cells, Electric measurements, Mechanical instruments, Electron-beam lithography, Chemical vapor deposition, Chemical elements, Gemstones, Plasma sources
© 2016 Author(s).
2016
Author(s)
You do not currently have access to this content.