We have developed a method of fabricating speckle-free channel-cut crystal optics with plasma chemical vaporization machining, an etching method using atmospheric-pressure plasma, for coherent X-ray applications. We investigated the etching characteristics to silicon crystals and achieved a small surface roughness of less than 1 nm rms at a removal depth of >10 μm, which satisfies the requirements for eliminating subsurface damage while suppressing diffuse scattering from rough surfaces. We applied this method for fabricating channel-cut Si(220) crystals for a hard X-ray split-and-delay optical system and confirmed that the crystals provided speckle-free reflection profiles under coherent X-ray illumination.
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See https://www.bnl.gov/nsls2/docs/PDF/cdr/4_IXS%20CDRfinal_10_10%20BAT.pdf for Conceptual design report for the inelastic x-ray scattering beamline at NSLS-II (LT-XFD_CDR_IXS-00123), final draft 2 October 2009, section 2.4: Optical Layout.
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