Short breeding times, narrow charge state distributions, low background, high efficiency, and the flexible time structure of the ejected low-emittance ion pulses are among the most attractive features of electron beam ion source or trap (EBIS/T) based charge breeders. Significant progress has been made to further improve these properties: Several groups are working to increase current densities towards 103 or even 104 A/cm2. These current densities will become necessary to deliver high charge states of heavy nuclei in a short time and/or provide sufficient space-charge capacity to handle high-current ion beams in next-generation rare-isotope beam (RIB) facilities. Efficient capture of continuous beams, attractive because of its potential of handling highest-current ion beams, has become possible with the development of high-density electron beams of >1 A. Requests for the time structure of the charge bred ion pulse range from ultra-short pulses to quasi-continuous beams. Progress is being made on both ends of this spectrum, by either dividing the extracted charge in many pulse-lets, adjusting the extraction potential for a near-uniform long pulse, or adding dedicated devices to spread the ion bunches delivered from the EBIS/T in time. Advances in EBIS/T charge state breeding are summarized, including recent results with NSCL’s ReA EBIS/T charge breeder.
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February 2016
Research Article|
November 11 2015
Recent charge-breeding developments with EBIS/T devices (invited)
S. Schwarz;
S. Schwarz
a)
National Superconducting Cyclotron Laboratory (NSCL),
Michigan State University
, East Lansing, Michigan 48824, USA
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A. Lapierre
A. Lapierre
National Superconducting Cyclotron Laboratory (NSCL),
Michigan State University
, East Lansing, Michigan 48824, USA
Search for other works by this author on:
Invited paper, published as part of the Proceedings of the 16th International Conference on Ion Sources, New York, New York, USA, August 2015.
Rev. Sci. Instrum. 87, 02A910 (2016)
Article history
Received:
August 25 2015
Accepted:
September 29 2015
Citation
S. Schwarz, A. Lapierre; Recent charge-breeding developments with EBIS/T devices (invited). Rev. Sci. Instrum. 1 February 2016; 87 (2): 02A910. https://doi.org/10.1063/1.4933033
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