With the advent of modern power semiconductor switching elements, the envelope defining “high power” is an ever increasing quantity. Characterization of these semiconductor power devices generally falls into two categories: switching, or transient characteristics, and static, or DC characteristics. With the increasing native voltage and current levels that modern power devices are capable of handling, characterization equipment meant to extract quasi-static IV curves has not kept pace, often leaving researchers with no other option than to construct ad hoc curve tracers from disparate pieces of equipment. In this paper, a dedicated 10 V, 500 A curve tracer was designed and constructed for use with state of the art high power semiconductor switching and control elements. The characterizer is a physically small, pulsed power system at the heart of which is a relatively high power linear amplifier operating in a switched manner in order to deliver well defined square voltage pulses. These actively shaped pulses are used to obtain device’s quasi-static DC characteristics accurately without causing any damage to the device tested. Voltage and current waveforms from each pulse are recorded simultaneously by two separate high-speed analog to digital converters and averaged over a specified interval to obtain points in the reconstructed IV graph.

1.
J.
Lutz
,
Semiconductor Power Devices
(
Springer
,
Heidelberg
,
2011
).
2.
B.
Baliga
,
Fundamentals of Power Semiconductor Devices
(
Springer
,
New York
,
2008
).
3.
A. K.
Agarwal
, “
An overview of SiC power devices
,” in
2010 International Conference on Power, Control and Embedded Systems (ICPCES)
(
IEEE
,
2010
), pp.
1
4
.
4.
A.
Agarwal
,
C.
Capell
,
Q.
Zhang
,
J.
Richmond
,
R.
Callanan
,
M.
O’Loughlin
,
A.
Burk
,
J.
Melcher
,
J.
Palmour
,
V.
Temple
,
H.
O’Brien
, and
C. J.
Scozzie
, “
9 kV 1 cm × 1 cm SiC super gto technology development for pulse power
,” in
IEEE Pulsed Power Conference (PPC ’09)
(
IEEE
,
2009
), pp.
264
269
.
5.
J.
Schrock
,
B.
Pushpakaran
,
A.
Bilbao
,
W.
Ray
,
E.
Hirsch
,
M.
Kelley
,
S.
Holt
, and
S.
Bayne
, “
Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions
,”
IEEE Trans. Power Electron.
31
,
1861
(
2015
).
6.
D.
Berning
,
A.
Hefner
,
J. M.
Ortiz-Rodriguez
,
C.
Hood
, and
A.
Rivera
, “
Generalized test bed for high-voltage, high-power SiC device characterization
,” in
Conference Record of the 2006 IEEE on Industry Applications Conference 41st IAS Annual Meeting
(
IEEE
,
2006
), Vol.
1
, pp.
338
345
.
7.
See http://powerelectronics.com/power-electronics-systems/characterizing-high-power-semiconductors-requires-new-technologies for Powerelectronics.com, Characterizing High Power Semiconductors Requires New Technologies; accessed 04 October 2015.
8.
S.
Lacouture
,
K.
Lawson
,
S.
Bayne
,
M.
Giesselmann
,
C.
Scozzie
,
H.
O’Brien
, and
A.
Ogunniyi
, “
Automated modular high energy evaluation system for experimental thyristor devices
,”
Rev. Sci. Instrum.
84
(
10
),
105108
(
2013
).
You do not currently have access to this content.