We have fabricated and characterized an n-doped InSb Faraday isolator in the mid-IR range (9.2 μm). A high isolation ratio (31(2) dB) and low insertion loss (1.9(3) dB) are obtained. Temperature dependance is analyzed. Further possible improvements are discussed, including the realization of a two-stage isolator. A similar design can be used to cover a wide wavelength range (λ ∼ 7.5 − 30 μm).

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