A few traditional pulse forming circuits are implemented and compared in a commercial 0.13 μm digital CMOS technology. Standard on-chip transmission lines are used as pulse forming lines (PFLs), while CMOS transistors are used as switches. The shortest output pulses of these circuits are analyzed and compared through Cadence Spectre simulations. All the CMOS circuits are fabricated in the commercial technology. Pulses of ∼170 ps durations and 120–400 mV amplitudes are obtained when the power supply is tuned from 1.2 to 2 V. The results show that these traditional PFL based circuits can be implemented in standard CMOS technology for high power short pulse generations. Furthermore, the PFL circuits significantly extend the short pulse generation capabilities of CMOS technologies.
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February 2011
Research Article|
February 11 2011
Transmission line based short pulse generation circuits in a 0.13 μm complementary metal–oxide–semiconductor technology Available to Purchase
Huan Zou;
Huan Zou
a)
1Department of Physical Electronics,
University of Electronics Science and Technology of China
, Chengdu, Sichuan 610054, China
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Yongtao Geng;
Yongtao Geng
2Department of Electrical and Computer Engineering,
Clemson University
, Clemson, South Carolina 29631, USA
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Pingshan Wang
Pingshan Wang
2Department of Electrical and Computer Engineering,
Clemson University
, Clemson, South Carolina 29631, USA
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Huan Zou
1,a)
Yongtao Geng
2
Pingshan Wang
2
1Department of Physical Electronics,
University of Electronics Science and Technology of China
, Chengdu, Sichuan 610054, China
2Department of Electrical and Computer Engineering,
Clemson University
, Clemson, South Carolina 29631, USA
a)
Electronic mail: [email protected].
Rev. Sci. Instrum. 82, 023301 (2011)
Article history
Received:
October 27 2010
Accepted:
December 11 2010
Citation
Huan Zou, Yongtao Geng, Pingshan Wang; Transmission line based short pulse generation circuits in a 0.13 μm complementary metal–oxide–semiconductor technology. Rev. Sci. Instrum. 1 February 2011; 82 (2): 023301. https://doi.org/10.1063/1.3534834
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