The heat diffusion related f−1/2 slow decay in the frequency domain transfer function of thermoelectric devices introduces a bias in figure of merit measurement methods that do not take it into account. The bias can range from less than 1% to more than 20% depending on the device. Harman type methods are not immune. Neither is the simple single measurement procedure proposed here on the basis of a complex thermal impedance analysis of the device, but in this case the supporting theory allows evaluating and correcting for the bias with documented accuracy. To this aim, both a theoretical approach based on a priori knowledge of the device and an experimental one based on theory guided measurements are possible and are described in the paper. Typical residual Type B uncertainties after correction can be below 10% of the bias.

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