We demonstrate the use of anodic bonding to fabricate cells with characteristic size as large as 7×10mm2, with height of ≈640 nm, and without any internal support structure. The cells were fabricated from Hoya SD-2 glass and silicon wafers, each with 3 mm thickness to maintain dimensional stability under internal pressure. Bonding was carried out at 350°C and 450 V with an electrode structure that excluded the electric field from the open region. We detail fabrication and characterization steps and also discuss the design of the fill line for access to the cavity.

1.
Y.
Nagato
and
K.
Nagai
,
Physica B
284
,
269
(
2000
).
2.
A. B.
Vorontsov
and
J. A.
Sauls
,
Phys. Rev. B
68
,
064508
(
2003
).
3.
A. B.
Vorontsov
and
J. A.
Sauls
,
Phys. Rev. Lett.
98
,
045301
(
2007
).
4.
A. J.
Leggett
,
Rev. Mod. Phys.
47
,
331
(
1975
).
5.
A.
Casey
,
J.
Parpia
,
R.
Schanen
,
B.
Cowan
, and
J.
Saunders
,
Phys. Rev. Lett.
92
,
255301
(
2004
).
6.
A.
Córcoles
,
A.
Casey
,
J.
Parpia
,
R.
Bowley
,
B.
Cowan
, and
J.
Saunders
,
AIP Conf. Proc.
850
,
99
(
2006
).
7.
S. G.
Dimov
,
R. G.
Bennett
,
B.
Ilic
,
S. S.
Verbridge
,
L. V.
Levitin
,
A. D.
Fefferman
,
A.
Casey
,
J.
Saunders
, and
J. M.
Parpia
,
J. Low Temp. Phys.
158
,
155
(
2010
).
8.
Y. -H.
Li
and
T. -L.
Ho
,
Phys. Rev. B
38
,
2362
(
1988
).
9.
I.
Rhee
,
F. M.
Gasparini
,
A.
Petrou
, and
D. J.
Bishop
,
Rev. Sci. Instrum.
61
,
1528
(
1990
).
10.
G.
Wallis
and
D. I.
Pomerantz
,
J. Appl. Phys.
40
,
3946
(
1969
).
11.
T. R.
Anthony
,
J. Appl. Phys.
54
,
2419
(
1983
).
12.
W. -P.
Shih
,
C. -Y.
Hui
, and
N. C.
Tien
,
J. Appl. Phys.
95
,
2800
(
2004
).
13.
Hoya Corp.
, 101 Metro Drive, Suite 500, San Jose, CA 95110.
14.
Machinery’s Handbook
, 21st ed., edited by,
E.
Oberg
,
F. D.
Jones
, and
H. L.
Horton
(
Industrial
,
New York
,
1980
).
15.
J. J.
Wortman
and
R. A.
Evans
,
J. Appl. Phys.
36
,
153
(
1965
).
16.
R. G.
Bennett
,
L. V.
Levitin
,
A.
Casey
,
B.
Cowan
,
J.
Parpia
, and
J.
Saunders
,
J. Low Temp. Phys.
158
,
163
(
2010
).
17.
L. V.
Levitin
,
R. G.
Bennett
,
A. J.
Casey
,
B.
Cowan
,
J.
Parpia
, and
J.
Saunders
,
J. Low Temp. Phys.
158
,
159
(
2010
).
18.
L. V.
Levitin
,
R. G.
Bennett
,
A.
Casey
,
B. P.
Cowan
,
C. P.
Lusher
,
J.
Saunders
,
D.
Drung
, and
Th.
Schurig
,
Appl. Phys. Lett.
91
,
262507
(
2007
).
19.
J. D.
Plummer
,
M. D.
Deal
, and
P. B.
Griffin
,
Silicon VLSI Technology: Fundamentals, Practice and Modeling
(
Prentice-Hall
,
New York
,
2000
), p.
319
.
20.
Crystalbond 509,
Structure Probe, Inc.
, 569 East Gay Street, West Chester, PA 19380, USA.
21.
Stycast 2850,
Ellsworth Adhesives
, W129 N10825 Washington Dr., Germantown, WI 53022, USA.
22.
W.
Kern
and
D. A.
Puotinen
,
RCA Rev.
31
,
187
(
1970
).
23.
E.
Nazaretski
,
R. D.
Merithew
,
R. O.
Pohl
, and
J. M.
Parpia
,
Phys. Rev. B
71
,
144201
(
2005
).
You do not currently have access to this content.