We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a focused ion beam milled structure on a high-dielectric-constant Ba0.6Sr0.4TiO3 thin film in the frequency range from 1.3 to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above 10GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.

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