A versatile system has been developed for the measurement under LABVIEW™ control of junction temperatures in a light emitting diode (LED). Measurements are reported on a commercially available high-intensity InGaAlP LED immersed in liquid nitrogen and driven by currents in the range of 18.5204mA. The measured junction temperature has an expanded uncertainty of ±2K at the 95% level of confidence for temperatures from 70to298K. Using the measured junction temperatures, the junction-to-case thermal resistance of the LED was established as 440KW for devices with intact encapsulation and 307KW for partial encapsulation.

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