We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 μm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than
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The parameters used in this estimate are radiative recombination coefficient= nonradiative recombination lifetime=10 ns; sample volume detected= refractive index of semiconductor=3.5; objective lens NA=0.4; and SPAD detection efficiency=8%.
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