A new electron bombardment evaporation source for ultrahigh vacuum (UHV) thin film deposition is presented. It is based on an original electrodes configuration (modeled on that of a vacuum triode) featuring, besides anode and filament, a biased grid acting as a power modulator. The presence of a polarized grid helps to minimize space charge problems, to improve electron focusing and to fine control the dissipation on the evaporating material, governing the sublimation rate. The electrodes geometry was optimized by studying electron trajectories and electrical field distribution in the electrodes zone with ray-tracing analysis. Mechanical solutions and electrodes geometry were designed to ensure low outgassing and UHV compatibility, as well as to facilitate maintenance and source cleaning. The evaporator is water cooled and a mechanically operated shutter is present. The working principles and the technical details are presented together with operating data and evaporation performances.
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September 2000
Research Article|
September 01 2000
Triode electron bombardment evaporation source for ultrahigh vacuum thin film deposition Available to Purchase
R. Verucchi;
R. Verucchi
Istituto Nazionale di Fisica della Materia, UdR di Modena, Via Campi 213/a, 41100 Modena, Italy
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S. Nannarone
S. Nannarone
Istituto Nazionale di Fisica della Materia, UdR di Modena, Dipartimento di Fisica, Università degli studi di Modena and Reggio Emilia, Via Campi 213/a, 41100 Modena, Italy
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R. Verucchi
Istituto Nazionale di Fisica della Materia, UdR di Modena, Via Campi 213/a, 41100 Modena, Italy
S. Nannarone
Istituto Nazionale di Fisica della Materia, UdR di Modena, Dipartimento di Fisica, Università degli studi di Modena and Reggio Emilia, Via Campi 213/a, 41100 Modena, Italy
Rev. Sci. Instrum. 71, 3444–3450 (2000)
Article history
Received:
February 14 2000
Accepted:
June 01 2000
Citation
R. Verucchi, S. Nannarone; Triode electron bombardment evaporation source for ultrahigh vacuum thin film deposition. Rev. Sci. Instrum. 1 September 2000; 71 (9): 3444–3450. https://doi.org/10.1063/1.1287624
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