The TITAN ion source is a new kind of source which can produce high current beams of both metal and gas ions simultaneously or separately. Ion beams of the elements Mg, Al, Ti, Ca, Cr, Fe, Co, Ni, Zn, Sn, Ta, Re, Y, C, He, N, Ar, and Xe have been generated. To obtain metal ions a vacuum arc is used in metal vapors created in ‘‘cathode spots.’’ To obtain gas ions a contragated arc discharge in gas current is used. The source extraction voltage is controlled within 10–100 kV. The ion current of both gas and metal was ≂1 A. The source operates in a frequency‐pulse regime at a pulse‐repetition frequency as high as 50 pps. At its normal operation the source provides a dose of 1016 ions/cm2 per minute on a 250‐cm2 area surface. The source is constructed according to the program on development of new technologies and is intended for high current surface modification and production of exotic surface alloys. At present, TITAN ion sources are utilized to modify physical‐mechanical parameters of different surfaces. Here we outline the ion source and its performance.
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April 1992
Proceedings of the fourth International Conference on Ion Sources
30 Sep − 4 Oct 1991
Bensheim (Germany)
Research Article|
April 01 1992
The 100‐kV gas and metal ion source for high current ion implantation Available to Purchase
S. P. Bugaev;
S. P. Bugaev
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
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A. G. Nikolaev;
A. G. Nikolaev
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
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E. M. Oks;
E. M. Oks
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
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P. M. Schanin;
P. M. Schanin
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
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G. Yu. Yushkov
G. Yu. Yushkov
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
Search for other works by this author on:
S. P. Bugaev
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
A. G. Nikolaev
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
E. M. Oks
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
P. M. Schanin
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
G. Yu. Yushkov
High Current Electronics Institute, Siberian Division of USSR Academy of Sciences, Tomsk, Akademichesky Ave. 4, 634055, USSR
Rev. Sci. Instrum. 63, 2422–2424 (1992)
Citation
S. P. Bugaev, A. G. Nikolaev, E. M. Oks, P. M. Schanin, G. Yu. Yushkov; The 100‐kV gas and metal ion source for high current ion implantation. Rev. Sci. Instrum. 1 April 1992; 63 (4): 2422–2424. https://doi.org/10.1063/1.1143827
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