A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III‐V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high‐energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real‐space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.

Topics
Electron diffraction, Epitaxy, Scanning tunneling microscopy, Semiconductors
1.
E. Parker, Ed., The Technology and Physics of Molecular Beam Epitaxy (Plenum, New York, 1985).
2.
P. K. Larsen and P. J. Dobson, Eds., Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, edited by P. K. Larsen and P. J. Dobson, (Plenum, New York, 1988).
3.
G.
 
Binnig
,
H.
 
Rohrer
,
Ch.
 
Gerber
, and
E.
 
Weibel
,
Phys. Rev. Lett.
 
50
,
120
(
1983
);
Google Scholar
Crossref
Search ADS
 
G.
Binnig
,
H.
Rohrer
,
Ch.
Gerber
, and
E.
Weibel
,
IBM J. Res. Dev.
4/5
,
30
(
1986
).
Google Scholar
 
4.
EPI Systems, St. Paul, MN 55101.
5.
D.
Barlett
,
C. W.
Snyder
,
B. G.
Orr
, and
R.
Clarke
,
Rev. Sci. Instrum.
62
,
1263
(
1991
).
Google Scholar
Crossref
Search ADS
 
6.
J. E.
Demuth
,
R. J.
Hamers
,
R. M.
Tromp
, and
M. E.
Welland
,
J. Vac. Sci. Technol. A
4
,
1320
(
1986
).
Google Scholar
Crossref
Search ADS
 
7.
Burleigh Instruments, Fishers, NY 14453.
8.
RHK Technology, Rochester Hills, MI 48063.
9.
C. W. Snyder, D. Barlett, B. G. Orr, P. K. Bhattacharya, and J. Singh, J. Vac. Sci. Technol. (to be published).
10.
B. G. Orr, C. W. Snyder, and M. Johnson (unpublished).
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© 1991 American Institute of Physics.
1991
American Institute of Physics
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