A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III‐V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high‐energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real‐space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.

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© 1991 American Institute of Physics.
1991
American Institute of Physics
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