Annealing furnace for III‐V semiconductor devices Available to Purchase

A furnace for annealing ion implantation damage in III‐V semiconductors has been built and tested. Designed for research applications, the furnace can accommodate odd shapes of material up to 2 in. in diameter. Samples are loaded onto a novel cantilevered support and are not moved during the annealing operation, facilitating proximity annealing techniques. Both chambers of this dual chambered system are O‐ring sealed for added safety during annealing in an arsine gas ambient. Electron mobilities between 4400 and 4600 cm²/V s at 300 K are routinely measured for 2×10¹⁷ cm⁻³ gallium arsenide material annealed in this sytem. The system has been used to anneal indium phosphide as well as gallium arsenide wafers.