Multipactor occurrence essentially depends on the secondary emission property of the surface material, which is, thus, the requisite input for multipactor threshold prediction using the numerical and theoretical approaches. However, secondary emission yield (SEY) deviation in experimental measurements inevitably leads to uncertainty error in multipactor threshold prediction. Therefore, this paper presents a thorough quantitative analysis of multipactor threshold sensitivity to SEY including the effect of the device geometry, the multipactor mode, and the material type. Based on the statistical modeling, multipactor threshold voltages with respect to the SEY variation in critical SEY regions are calculated for both the parallel plates and coaxial lines with different multipactor orders and typical materials. Furthermore, the distribution of electron impact energy is also obtained to elucidate the underlying mechanism for the relevant sensitivity discrepancy. The result reveals that multipactor threshold is generally most sensitive to the energy region below the first crossover energy (E1), and this is changed to higher energies below the corresponding energy to the SEY maximum (Em) with a change in the device geometry, multipactor mode, or coating material. It is also found that the magnitude relation of the threshold sensitivity between different regions is radically determined with the distribution of electron impact energy, and the SEY variation close to Em merely affects the threshold result with a high multipactor order. This research provides useful reference for properly determining the threshold margin from the measurement error of SEY, thus promoting the performance optimization with multipactor prevention in the practical application of microwave devices.
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March 2023
Research Article|
March 07 2023
Quantitative analysis of multipactor threshold sensitivity to secondary emission yield of microwave devices Available to Purchase
Shu Lin
;
Shu Lin
(Formal analysis, Funding acquisition, Investigation, Methodology, Validation, Visualization, Writing – original draft)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
3
Department of Electrical and Computer Engineering, Michigan State University
, East Lansing, Michigan 48824, USA
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Hao Qu
;
Hao Qu
(Formal analysis, Investigation, Validation, Visualization)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
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Ning Xia;
Ning Xia
(Formal analysis, Investigation, Validation)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
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Patrick Wong
;
Patrick Wong
(Formal analysis, Writing – review & editing)
3
Department of Electrical and Computer Engineering, Michigan State University
, East Lansing, Michigan 48824, USA
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Peng Zhang
;
Peng Zhang
(Funding acquisition, Writing – review & editing)
3
Department of Electrical and Computer Engineering, Michigan State University
, East Lansing, Michigan 48824, USA
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John Verboncoeur
;
John Verboncoeur
(Funding acquisition, Writing – review & editing)
3
Department of Electrical and Computer Engineering, Michigan State University
, East Lansing, Michigan 48824, USA
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Meng Cao
;
Meng Cao
(Funding acquisition, Writing – review & editing)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
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Yonggui Zhai
;
Yonggui Zhai
(Validation)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
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Yongdong Li
;
Yongdong Li
(Funding acquisition, Writing – review & editing)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
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Hongguang Wang
Hongguang Wang
a)
(Funding acquisition, Validation, Writing – review & editing)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
a)Author to whom correspondence should be addressed: [email protected]
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Shu Lin
1,2,3
Hao Qu
1,2
Ning Xia
1,2
Patrick Wong
3
Peng Zhang
3
John Verboncoeur
3
Meng Cao
1,2
Yonggui Zhai
1,2
Yongdong Li
1,2
Hongguang Wang
1,2,a)
1
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University
, Xi'an 710049, China
2
School of Electronic Science and Engineering, Xi'an Jiaotong University
, Xi'an 710049, China
3
Department of Electrical and Computer Engineering, Michigan State University
, East Lansing, Michigan 48824, USA
a)Author to whom correspondence should be addressed: [email protected]
Phys. Plasmas 30, 033104 (2023)
Article history
Received:
December 15 2022
Accepted:
February 10 2023
Citation
Shu Lin, Hao Qu, Ning Xia, Patrick Wong, Peng Zhang, John Verboncoeur, Meng Cao, Yonggui Zhai, Yongdong Li, Hongguang Wang; Quantitative analysis of multipactor threshold sensitivity to secondary emission yield of microwave devices. Phys. Plasmas 1 March 2023; 30 (3): 033104. https://doi.org/10.1063/5.0138875
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