Even after 50 years of development, narrowband high-power microwave (HPM) source technologies remain the focus of much research due to intense interest in innovative applications of HPMs in fields such as directed energy, space propulsion, and high-power radar. A few decades ago, the main aim of investigations in this field was to enhance the output power of a single HPM source to tens or hundreds of gigawatts, but this goal has proven difficult due to physical limitations. Therefore, recent research into HPM sources has focused on five main targets: phase locking and power combination, high power efficiency, compact sources with a low or no external magnetic field, high pulse energy, and high-power millimeter-wave generation. Progress made in these aspects of narrowband HPM sources over the last decade is analyzed and summarized in this paper. There is no single type of HPM source capable of excellent performance in all five aspects. Specifically, high pulse energy cannot be achieved together with high power efficiency. The physical difficulties of high power generation in the millimeter wave band are discussed. Semiconductor-based HPM sources and metamaterial (MTM) vacuum electron devices (VEDs) are also commented on here. Semiconductor devices have the advantage of smart frequency agility, but they have low power density and high cost. MTM VEDs have the potential to be high power efficiency HPM sources in the low frequency band. Moreover, problems relating to narrowband HPM source lifetime and stability, which are the important determinants of the real-world applicability of these sources, are also discussed.
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January 2020
Review Article|
January 17 2020
Progress in narrowband high-power microwave sources
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Jun Zhang
;
Jun Zhang
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Dian Zhang
;
Dian Zhang
a)
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
a) Author to whom correspondence should be addressed: [email protected]
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Yuwei Fan;
Yuwei Fan
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Juntao He;
Juntao He
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Xingjun Ge;
Xingjun Ge
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Xiaoping Zhang;
Xiaoping Zhang
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Jinchuan Ju
;
Jinchuan Ju
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Tao Xun
Tao Xun
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
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Jun Zhang
Dian Zhang
a)
Yuwei Fan
Juntao He
Xingjun Ge
Xiaoping Zhang
Jinchuan Ju
Tao Xun
College of Advanced Interdisciplinary Studies, National University of Defense Technology
, Changsha 410072, People's Republic of China
a) Author to whom correspondence should be addressed: [email protected]
Phys. Plasmas 27, 010501 (2020)
Article history
Received:
September 05 2019
Accepted:
December 22 2019
Citation
Jun Zhang, Dian Zhang, Yuwei Fan, Juntao He, Xingjun Ge, Xiaoping Zhang, Jinchuan Ju, Tao Xun; Progress in narrowband high-power microwave sources. Phys. Plasmas 1 January 2020; 27 (1): 010501. https://doi.org/10.1063/1.5126271
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