The results of second order polarization propagator calculations of the valence excitation energies and oscillator strengths of Si2C and Si3 are reported and compared to the previously published spectrum of SiC2. The character and properties of the excitations are explored and suggestions are made as to excitations which may be amendable to experimental study. A previously observed optical transition in Si clusters is assigned to an intense line in the Si3 spectrum at about 46 000 cm1.

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