In the era of artificial intelligence, there has been a rise in novel computing methods due to the increased demand for rapid and effective data processing. It is of great significance to develop memristor devices capable of emulating the computational neural network of the brain, especially in the realm of artificial intelligence applications. In this work, a memristor based on NiAl-layered double hydroxides is presented with excellent electrical performance, including analog resistive conversion characteristics and the effect of multi-level conductivity modulation. In addition, the device's conductance can be continuously adjusted by varying pulse width, interval, and amplitude. The successful replication of synaptic features has been achieved. In order to implement the functions of “NOT,” “AND,” and “OR,” a logic gate is constructed using two synaptic devices. The confirmation of the potential use of synaptic devices in brain-like computing was demonstrated. In addition, it demonstrates the potential of these devices in supporting computing models beyond von Neumann architecture.
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28 January 2025
Research Article|
January 22 2025
A NiAl-layered double hydroxides memristor with artificial synapse function and its Boolean logic applications
Ruibo Ai
;
Ruibo Ai
a)
(Conceptualization, Investigation, Methodology, Writing – review & editing)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
a)Author to whom correspondence should be addressed: [email protected]
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Wang Luo;
Wang Luo
(Resources)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
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Xiaojun Liu;
Xiaojun Liu
(Data curation)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
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Tao Zhang;
Tao Zhang
(Formal analysis)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
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Jiqun Sang;
Jiqun Sang
(Methodology)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
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Yaolin Zhang
Yaolin Zhang
(Conceptualization)
Department of Physics, College of Science, Qiqihar University
, Qiqihar 161006, China
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a)Author to whom correspondence should be addressed: [email protected]
J. Chem. Phys. 162, 044701 (2025)
Article history
Received:
November 14 2024
Accepted:
January 03 2025
Citation
Ruibo Ai, Wang Luo, Xiaojun Liu, Tao Zhang, Jiqun Sang, Yaolin Zhang; A NiAl-layered double hydroxides memristor with artificial synapse function and its Boolean logic applications. J. Chem. Phys. 28 January 2025; 162 (4): 044701. https://doi.org/10.1063/5.0248908
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